公开(公告)号：US11705545B2

公开(公告)日：2023-07-18

申请号：US17306141

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/22 ,  H01L33/44 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/60 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US11424383B2

公开(公告)日：2022-08-23

申请号：US17076511

申请日：2020-10-21

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hu ,  Wei-Chieh Lien ,  Chen Ou ,  Chia-Ming Liu ,  Tzu-Yi Chi

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01L33/02 ,  H01L33/38 ,  H01L33/42

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

公开(公告)号：US10818818B2

公开(公告)日：2020-10-27

申请号：US16196793

申请日：2018-11-20

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hu ,  Wei-Chieh Lien ,  Chen Ou ,  Chia-Ming Liu ,  Tzu-Yi Chi

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01L33/02 ,  H01L33/38 ,  H01L33/42

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

公开(公告)号：US09640731B2

公开(公告)日：2017-05-02

申请号：US14825899

申请日：2015-08-13

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chun-Hsiang Tu ,  De-Shan Kuo ,  Chun-Teng Ko ,  Po-Shun Chiu ,  Chia-Liang Hsu

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/46 ,  H01L33/002 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

公开(公告)号：US09257604B2

公开(公告)日：2016-02-09

申请号：US14132819

申请日：2013-12-18

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chiu-Lin Yao

IPC: H01L33/22 ,  H01L33/24

CPC classification number: H01L33/20 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0091

Abstract: The disclosure provides a light-emitting device. The light-emitting device comprises: a substrate having a first patterned unit; and a light-emitting stack on the substrate and having an active layer with a first surface; wherein the first patterned unit, protruding in a direction from the substrate to the light-emitting stack, has side surfaces abutting with each other and substantially non-parallel to the first surface in cross-sectional view, and has a non-polygon shape in top view.

Abstract translation: 本发明提供一种发光装置。 发光器件包括：具有第一图案化单元的衬底; 以及在所述基板上的发光叠层，并且具有带有第一表面的有源层; 其中所述第一图案化单元在从所述基板到所述发光叠层的方向上突出，具有彼此邻接并且在横截面图中基本上不平行于所述第一表面的侧表面，并且具有非多边形形状 顶视图。

公开(公告)号：US08753909B2

公开(公告)日：2014-06-17

申请号：US13945730

申请日：2013-07-18

Applicant: Epistar Corporation

Inventor： Chen-Ke Hsu ,  Win Jim Su ,  Chia-Ming Chuang ,  Chen Ou

IPC: H01L21/00

CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L33/20

Abstract: A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.

Abstract translation: 提供一种发光器件及其制造方法。 制造发光器件的方法包括：提供具有第一主表面和第二主表面的衬底; 在所述第一主表面上形成多个发光堆叠; 在每个发光堆上形成蚀刻保护层; 通过基板上的不连续激光束形成多个孔; 蚀刻多个孔; 并且沿着所述多个孔切割所述基板以形成发光器件。 发光器件具有衬底，其中衬底的侧壁包括具有基本平坦表面的第一区域和具有基本纹理表面的第二区域。

公开(公告)号：US12230736B2

公开(公告)日：2025-02-18

申请号：US17211331

申请日：2021-03-24

Applicant: EPISTAR CORPORATION

Inventor： Jian-Zhi Chen ,  Yen-Chun Tseng ,  Hui-Fang Kao ,  Yao-Ning Chan ,  Yi-Tang Lai ,  Yun-Chung Chou ,  Shih-Chang Lee ,  Chen Ou

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/36 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46

Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

公开(公告)号：US12166151B2

公开(公告)日：2024-12-10

申请号：US17389467

申请日：2021-07-30

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying Cho ,  Li-Yu Shen ,  Yu-Yi Hung ,  Chen Ou ,  Li-Ming Chang

IPC: H01L33/10 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.

公开(公告)号：US20230074033A1

公开(公告)日：2023-03-09

申请号：US17940361

申请日：2022-09-08

Applicant: EPISTAR CORPORATION

Inventor： Wei-Jen Hsueh ,  Shih-Chang Lee ,  Chen Ou ,  Po-Chou Pan ,  Wen-Luh Liao

IPC: H01L27/15 ,  H01L27/144

Abstract: An optoelectronic device includes a substrate, a first semiconductor stack located on the substrate, a second semiconductor stack located on the first semiconductor stack, and a first optical structure located between the first semiconductor stack and the second semiconductor stack. The first semiconductor stack includes a first semiconductor layer, a second semiconductor layer and a first active layer which emits or absorbs a first light with a first wavelength. The second semiconductor stack includes a third semiconductor layer, a fourth semiconductor layer and a second active layer which emits or absorbs a second light with a second wavelength smaller than the first wavelength. The first optical structure includes a plurality of first parts and a plurality of second parts. The first parts and the second parts are alternately arranged by a first period along a horizontal direction parallel to the substrate.

公开(公告)号：US10319780B2

公开(公告)日：2019-06-11

申请号：US15675351

申请日：2017-08-11

Applicant: Epistar Corporation

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu ,  Sheng-Chih Wang ,  Hsin-Mei Tsai ,  Chia-Chen Tsai ,  Chuan-Cheng Chang

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.