公开(公告)号：US20220102582A1

公开(公告)日：2022-03-31

申请号：US17550449

申请日：2021-12-14

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Fan-Lei WU ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Hung-Ta CHENG ,  Chih-Chaing YANG ,  Yao-Ru CHANG ,  Yi HSIAO ,  Hsiang CHANG

IPC: H01L33/20

Abstract: A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.

公开(公告)号：US20200075807A1

公开(公告)日：2020-03-05

申请号：US16549822

申请日：2019-08-23

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Fan-Lei WU ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Hung-Ta CHENG ,  Chih-Chaing YANG ,  Yao-Ru CHANG ,  Yi HSIAO ,  Hsiang CHANG

IPC: H01L33/20

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.