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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190081213A1

    公开(公告)日：2019-03-14

    申请号：US16128604

    申请日：2018-09-12

    Applicant: EPISTAR CORPORATION

    Inventor： Yung-Fu CHANG ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG ,  Wen-Luh LIAO ,  Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Ming CHEN ,  Yao-Ning CHAN ,  Chun-Fu TSAI

    IPC: H01L33/38 ,  H01L33/30

    CPC classification number: H01L33/38 ,  H01L33/30

    Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 ∘

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20150108494A1

    公开(公告)日：2015-04-23

    申请号：US14520067

    申请日：2014-10-21

    Applicant: EPISTAR CORPORATION

    Inventor： Wen-Luh LIAO ,  Chih-Chiang LU ,  Shih-Chang LEE ,  Hung-Ta CHENG ,  Hsin-Chan CHUNG ,  Yi-Chieh LIN

    IPC: H01L33/00 ,  H01L33/42 ,  H01L33/30

    CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/0079 ,  H01L2933/0091

    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

    Abstract translation: 本发明提供一种发光装置及其制造方法。 该发光装置包括：发光叠层; 以及半导体层，其具有连接到所述发光叠层的第一表面，与所述第一表面相对的第二表面和空隙; 其中所述空隙包括靠近所述第一表面的底部部分和所述第二表面上的开口，并且所述底部部分的尺寸大于所述开口的尺寸。

    LIGHT EMITTING DEVICE
    6.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20200105975A1

    公开(公告)日：2020-04-02

    申请号：US16700614

    申请日：2019-12-02

    Applicant: EPISTAR CORPORATION

    Inventor： Yao-Ru CHANG ,  Wen-Luh LIAO ,  Chun-Yu LIN ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG

    IPC: H01L33/44 ,  H01L33/38 ,  H01L33/24 ,  H01L33/30 ,  H01L33/62

    Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

    SEMICONDUCTOR STRUCTURE
    9.
    发明申请
    SEMICONDUCTOR STRUCTURE 有权

    公开(公告)号：US20220102582A1

    公开(公告)日：2022-03-31

    申请号：US17550449

    申请日：2021-12-14

    Applicant: EPISTAR CORPORATION

    Inventor： Yung-Fu CHANG ,  Fan-Lei WU ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Hung-Ta CHENG ,  Chih-Chaing YANG ,  Yao-Ru CHANG ,  Yi HSIAO ,  Hsiang CHANG

    IPC: H01L33/20

    Abstract: A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.

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