公开(公告)号：US20150076536A1

公开(公告)日：2015-03-19

申请号：US14470396

申请日：2014-08-27

Applicant: Epistar Corporation

Inventor： Chen OU ,  Chun-Wei CHANG ,  Chih-Wei WU ,  Sheng-Chih WANG ,  Hsin-Mei TSAI ,  Chia-Chen TSAI ,  Chuan-Cheng CHANG

IPC: H01L27/15 ,  H01L33/42 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, and a first trench between the first light-emitting structure and the second light-emitting structure, exposing the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein.

Abstract translation: 发光元件包括在第一半导体层上的第一半导体层，第一发光结构和第二发光结构，第一半导体层上的第一电极，第一发光结构上的第二电极， 以及在所述第一发光结构和所述第二发光结构之间的第一沟槽，暴露所述第一半导体层，其中所述第一沟槽没有形成在所述第一电极和所述第二电极中。

公开(公告)号：US20190237628A1

公开(公告)日：2019-08-01

申请号：US16380115

申请日：2019-04-10

Applicant: EPISTAR CORPORATION

Inventor： Chen OU ,  Liang-Sheng CHI ,  Chun-WEI CHANG ,  Chih-Wei WU

IPC: H01L33/42 ,  H01L33/14 ,  H01L33/08

CPC classification number: H01L33/42 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38

Abstract: A light-emitting device includes: a light-emitting stack formed on a first conductivity type contact layer and including an active layer and a second conductivity type semiconductor layer on the active layer; a first trench dividing the light-emitting stack into a first portion and a second portion, wherein the first trench includes a bottom exposing a top surface of the first conductivity type contact layer; a non-conductive material layer formed in the first trench and being a film conformal to a profile of the first trench; a connecting layer formed in the first trench and electrically connecting the first and the second portions of the light-emitting stack, wherein the connecting layer is a film conformal to a profile of the non-conductive material layer; and a first electrode formed on the first conductivity type contact layer and electrically connected to the first conductivity type semiconductor layer.

公开(公告)号：US20170263818A1

公开(公告)日：2017-09-14

申请号：US15605524

申请日：2017-05-25

Applicant: EPISTAR CORPORATION

Inventor： Chen OU ,  Chun-Wei CHANG ,  Chih-Wei WU

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/42

CPC classification number: H01L33/36 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42

Abstract: A light-emitting device, includes: a substrate; a light-emitting structure formed on the substrate and including a first portion, and a second portion where no optoelectronic conversion occurs therein; and a first electrode located on both the first portion and the second portion.

公开(公告)号：US20190252459A1

公开(公告)日：2019-08-15

申请号：US16390899

申请日：2019-04-22

Applicant: Epistar Corporation

Inventor： Chen OU ,  Chun-Wei CHANG ,  Chih-Wei WU ,  Sheng-Chih WANG ,  Hsin-Mei TSAI ,  Chia-Chen TSAI ,  Chuan-Cheng CHANG

IPC: H01L27/15

CPC classification number: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.

公开(公告)号：US20170365637A1

公开(公告)日：2017-12-21

申请号：US15675351

申请日：2017-08-11

Applicant: Epistar Corporation

Inventor： Chen OU ,  Chun-Wei CHANG ,  Chih-Wei WU ,  Sheng-Chih WANG ,  Hsin-Mei TSAI ,  Chia-Chen TSAI ,  Chuan-Cheng CHANG

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.