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公开(公告)号：US20170263818A1
公开(公告)日：2017-09-14
申请号：US15605524
申请日：2017-05-25
Applicant: EPISTAR CORPORATION
Inventor： Chen OU , Chun-Wei CHANG , Chih-Wei WU
Abstract: A light-emitting device, includes: a substrate; a light-emitting structure formed on the substrate and including a first portion, and a second portion where no optoelectronic conversion occurs therein; and a first electrode located on both the first portion and the second portion.
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Patent Agency Ranking
公开(公告)号：US20250015246A1
公开(公告)日：2025-01-09
申请号：US18893462
申请日：2024-09-23
Applicant: EPISTAR CORPORATION
Inventor： Yu-Tsu LEE , Yi-Yang CHIU , Chun-Wei CHANG , Min-Hao YANG , Wei-Jen HSUEH , Yi-Ming CHEN , Shih-Chang LEE , Chung-Hao WANG
Abstract: A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.
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公开(公告)号：US20220302360A1
公开(公告)日：2022-09-22
申请号：US17203402
申请日：2021-03-16
Applicant: EPISTAR CORPORATION
Inventor： Yu-Tsu LEE , Yi-Yang CHIU , Chun-Wei CHANG , Min-Hao YANG , Wei-Jen HSUEH , Yi-Ming CHEN , Shih-Chang LEE , Chung-Hao WANG
Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.
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公开(公告)号：US20190252459A1
公开(公告)日：2019-08-15
申请号：US16390899
申请日：2019-04-22
Applicant: Epistar Corporation
Inventor： Chen OU , Chun-Wei CHANG , Chih-Wei WU , Sheng-Chih WANG , Hsin-Mei TSAI , Chia-Chen TSAI , Chuan-Cheng CHANG
IPC: H01L27/15
Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.
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公开(公告)号：US20170365637A1
公开(公告)日：2017-12-21
申请号：US15675351
申请日：2017-08-11
Applicant: Epistar Corporation
Inventor： Chen OU , Chun-Wei CHANG , Chih-Wei WU , Sheng-Chih WANG , Hsin-Mei TSAI , Chia-Chen TSAI , Chuan-Cheng CHANG
Abstract: A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.
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公开(公告)号：US20150076536A1
公开(公告)日：2015-03-19
申请号：US14470396
申请日：2014-08-27
Applicant: Epistar Corporation
Inventor： Chen OU , Chun-Wei CHANG , Chih-Wei WU , Sheng-Chih WANG , Hsin-Mei TSAI , Chia-Chen TSAI , Chuan-Cheng CHANG
Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, and a first trench between the first light-emitting structure and the second light-emitting structure, exposing the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein.
Abstract translation: 发光元件包括在第一半导体层上的第一半导体层，第一发光结构和第二发光结构，第一半导体层上的第一电极，第一发光结构上的第二电极， 以及在所述第一发光结构和所述第二发光结构之间的第一沟槽，暴露所述第一半导体层，其中所述第一沟槽没有形成在所述第一电极和所述第二电极中。
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