公开(公告)号：US20240222538A1

公开(公告)日：2024-07-04

申请号：US18608216

申请日：2024-03-18

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih SU ,  Chia-Hsiang CHOU ,  Wei-Chih PENG ,  Wen-Luh LIAO ,  Chao-Shun HUANG ,  Hsuan-Le LIN ,  Shih-Chang LEE ,  Mei Chun LIU ,  Chen OU

IPC: H01L31/055 ,  H01L25/16 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/101 ,  H01L31/12

CPC classification number: H01L31/055 ,  H01L25/167 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/101 ,  H01L31/125

Abstract: A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, an insulating layer located on the second semiconductor layer, and an electrode structure located on the insulating layer. The second semiconductor layer includes a first region having a first conductivity-type and a second region having a second conductivity-type different from the first conductivity-type. The first region is surrounded by the second region, and includes a geometric center and an interface between the first region and the second region. The insulating layer covers the first region and the second region. The electrode structure includes an outer sidewall located on the second region. In a top view, the interface is located between the geometric center and the outer sidewall.

公开(公告)号：US20210408311A1

公开(公告)日：2021-12-30

申请号：US17364175

申请日：2021-06-30

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih SU ,  Chia-Hsiang CHOU ,  Wei-Chih PENG ,  Wen-Luh LIAO ,  Chao-Shun HUANG ,  Hsuan-Le LIN ,  Shih-Chang LEE ,  Mei Chun LIU ,  Chen OU

IPC: H01L31/055 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/12 ,  H01L25/16 ,  H01L31/101

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.