公开(公告)号：US20200006543A1

公开(公告)日：2020-01-02

申请号：US16453118

申请日：2019-06-26

Applicant: EPISTAR CORPORATION

Inventor： Shang-Ju TU ,  Chia-Cheng LIU ,  Tsung-Cheng CHANG ,  Ya-Yu YANG ,  Yu-Jiun SHEN ,  Jen-Inn CHYI

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/417

Abstract: A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.