公开(公告)号：US20130221395A1

公开(公告)日：2013-08-29

申请号：US13758238

申请日：2013-02-04

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Chien-Yuan WANG ,  Jin-Ywan LIN ,  Chiu-Lin YAO

IPC: H01L33/42

CPC classification number: H01L33/42 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.

Abstract translation: 光电子器件包括半导体叠层层; 位于半导体堆叠层上的第一透明导电氧化物（以下简称为“TCO”）层，其中第一TCO层具有至少一个开口; 以及覆盖所述第一TCO层的第二TCO层，其中所述第二TCO层填充到所述第一TCO层的开口中并与所述半导体堆叠层接触，并且所述第一TCO层和所述第二TCO层中的一个形成欧姆接触 与半导体堆叠层。