公开(公告)号：US20250143026A1

公开(公告)日：2025-05-01

申请号：US19009855

申请日：2025-01-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chao-Hsing CHEN ,  Chi-Ling LEE ,  Chen OU ,  Min-Hsun HSIEH

IPC: H10H20/831 ,  H01L25/13 ,  H10H20/833

Abstract: A semiconductor light-emitting device includes: a semiconductor stack, including; an active layer, formed on the semiconductor stack; a second semiconductor contact layer formed on the active layer; and a recessed region formed in the semiconductor stack and including a part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on semiconductor stack, including a first and second opening; a first electrode pad in the first opening and connected with the first semiconductor contact layer; and a second electrode pad in the second opening and connected to the transparent electrode. The semiconductor light-emitting device receives an operating current having ratio to the area of the transparent electrode that ranges from 10 mA/mm2 to 1000 mA/mm2. In a top view, the active layer surrounds the recessed region. The semiconductor stack and the transparent electrode layer each includes an edge adjacent to the recessed region.

公开(公告)号：US20240405169A1

公开(公告)日：2024-12-05

申请号：US18675532

申请日：2024-05-28

Applicant: EPISTAR CORPORATION

Inventor： Chong-Yu WANG ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chien-Chih CHEN ,  Min-Hsun HSIEH

IPC: H01L33/50 ,  H01L25/16

Abstract: A wavelength conversion unit arrangement includes a carrier and a wavelength conversion unit. The wavelength conversion unit includes a wavelength conversion layer and a filter layer, and the filter layer attaches the wavelength conversion unit to the carrier. The filter layer has a first surface facing the carrier and a second surface opposite the first surface, and the first surface and the second surface have different textures.

公开(公告)号：US20240339345A1

公开(公告)日：2024-10-10

申请号：US18749201

申请日：2024-06-20

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  De-Shan KUO ,  Chang-Lin LEE ,  Jhih-Yong YANG

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/683 ,  H01L33/00

CPC classification number: H01L21/67721 ,  H01L21/67144 ,  H01L21/67288 ,  H01L21/6773 ,  H01L21/6836 ,  H01L33/0075 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68368

Abstract: A chip transferring method includes steps of: providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion of the plurality of chips and a second portion of the plurality of chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion of the plurality of chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion of the plurality of chips from the first load-bearing structure; dividing the first portion of the plurality of chips into a plurality of blocks, wherein each of the plurality of blocks comprising multiple chips of the first portion of the plurality of chips; and transferring the first portion of the plurality of chips in one of the plurality of blocks to a second load-bearing structure in single-batch.

公开(公告)号：US20240313146A1

公开(公告)日：2024-09-19

申请号：US18669153

申请日：2024-05-20

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Jen-Chieh YU ,  Chun-Wei CHEN

IPC: H01L31/147 ,  G09G3/32 ,  H05B45/12

CPC classification number: H01L31/147 ,  G09G3/32 ,  H05B45/12 ,  G09G2320/0626

Abstract: The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. The light-emitting groups matrix comprises m columns and n rows.

公开(公告)号：US20240038736A1

公开(公告)日：2024-02-01

申请号：US18379946

申请日：2023-10-13

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/60

CPC classification number: H01L25/0753 ,  H01L33/62 ,  H01L33/60 ,  H01L2933/0066

Abstract: An embodiment of present invention discloses a light-emitting device which includes a first light-emitting area, a second light-emitting area, and a third light-emitting area. The first light-emitting area emits a red light and includes a first light-emitting unit. The second light-emitting area emits a blue light and includes a second light-emitting unit. The third light-emitting area emits a green light and includes a third light-emitting unit. The first light-emitting area is larger than the second light-emitting area and larger than the third light-emitting area. Each of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit has a width of less than 100 μm and a length of less than 100 μm.

公开(公告)号：US20220302346A1

公开(公告)日：2022-09-22

申请号：US17203293

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Yu-Tsu LEE ,  Wei-Jen HSUEH

IPC: H01L33/30 ,  H01L27/15 ,  H01L33/62 ,  H01L33/00

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a first semiconductor layer, an active region, a p-type or n-type layer, and a first metal element-containing structure. The first semiconductor layer has a surface including a first portion and a second portion. The active region is located on the first portion and includes AlGaInAs, InGaAsP, AlGaAsP or AlGaInP. The p-type or n-type layer includes an oxygen element (O) and a metal element, and is located on the second portion. The first metal element-containing structure is located on the p-type or n-type layer. The p-type or n-type layer physically contacts the first metal element-containing structure and the first semiconductor layer.

公开(公告)号：US20210280436A1

公开(公告)日：2021-09-09

申请号：US17327270

申请日：2021-05-21

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH

IPC: H01L21/48 ,  H01L23/00

Abstract: An applying method includes the following steps. Firstly, a conductive adhesive including a plurality of conductive particles and an insulating binder is provided. Then, a carrier plate is provided. Then, a patterned adhesive is formed on the carrier plate by the conductive adhesive, wherein the patterned adhesive includes a first transferring portion. Then, a manufacturing device including a needle is provided. Then, the needle of the manufacturing device is moved to contact the first transferring portion. Then, the transferring portion is transferred to a board by the manufacturing device.

公开(公告)号：US20210020815A1

公开(公告)日：2021-01-21

申请号：US17060772

申请日：2020-10-01

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Tsung-Hong LU

IPC: H01L33/60 ,  H01L33/50 ,  H01L33/62

Abstract: A light-emitting device includes a light-emitting unit comprising a top surface and a first side surface; a light-transmitting layer covers the top surface and the first side surface; a wavelength conversion structure disposed on the light-transmitting layer; a protective layer covering the second side surface and the light-transmitting layer; and a reflective layer surrounding the protective layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, the wavelength conversion layer, the first barrier layer, and the second barrier layer are collectively formed a second side surface;

公开(公告)号：US20200373469A1

公开(公告)日：2020-11-26

申请号：US16882412

申请日：2020-05-22

Applicant: EPISTAR CORPORATION ,  Yenrich Technology Corporation

Inventor： Shau-Yi CHEN ,  Tzu-Yuan LIN ,  Wei-Chiang HU ,  Pei-Hsuan LAN ,  Min-Hsun HSIEH

IPC: H01L33/58 ,  H01L27/15 ,  H01L33/62

Abstract: A package includes a substrate, a first light-emitting unit, a second light-emitting unit, a light-transmitting layer, and a light-absorbing layer. The substrate has a first surface and an upper conductive layer on the first surface. The first light-emitting unit and the second light-emitting unit are disposed on the upper conductive layer. The first light-emitting unit has a first light-emitting surface and a first side wall. The second light-emitting unit has a second light-emitting surface and a second side wall. The light-transmitting layer is disposed on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit. The light-absorbing layer is disposed between the substrate and the light-transmitting layer, covers the upper conductive layer, the first side wall, and the second side wall, and exposes the first light-emitting surface and the second light-emitting surface.

公开(公告)号：US20200259054A1

公开(公告)日：2020-08-13

申请号：US16863107

申请日：2020-04-30

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Jai-Tai KUO ,  Wei-Kang CHENG

IPC: H01L33/60 ,  H01L25/075 ,  H01L33/48 ,  H01L33/50 ,  H01L33/62

Abstract: The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.