公开(公告)号：US20250056930A1

公开(公告)日：2025-02-13

申请号：US18799505

申请日：2024-08-09

Applicant: EPISTAR CORPORATION

Inventor： Tzu Yun Feng ,  Wei Shan Yeoh ,  Yao-Ning Chan ,  June Kuo

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L33/64

Abstract: A semiconductor device includes a semiconductor stack, an insulating structure, a metal oxide structure and a metal structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active structure located between the first semiconductor structure and the second semiconductor structure. The insulating structure is disposed below the first semiconductor structure and comprising a first opening and a second opening. The metal oxide structure is disposed below the insulating structure and located in the first opening, and contacts the semiconductor stack to form a first contact surface therebetween. The metal structure is located in the second opening, and contacts the semiconductor stack to form a second contact surface therebetween. The first contact surface is separated from the second contact surface.