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公开(公告)号：US20250056930A1
公开(公告)日：2025-02-13
申请号：US18799505
申请日：2024-08-09
Applicant: EPISTAR CORPORATION
Inventor： Tzu Yun Feng , Wei Shan Yeoh , Yao-Ning Chan , June Kuo
Abstract: A semiconductor device includes a semiconductor stack, an insulating structure, a metal oxide structure and a metal structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active structure located between the first semiconductor structure and the second semiconductor structure. The insulating structure is disposed below the first semiconductor structure and comprising a first opening and a second opening. The metal oxide structure is disposed below the insulating structure and located in the first opening, and contacts the semiconductor stack to form a first contact surface therebetween. The metal structure is located in the second opening, and contacts the semiconductor stack to form a second contact surface therebetween. The first contact surface is separated from the second contact surface.
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公开(公告)号：US09614127B2
公开(公告)日：2017-04-04
申请号：US14902795
申请日：2013-07-05
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Huang , Yao-Ning Chan , Tzu Chieh Hsu , Yi Ming Chen , Hsin-Chih Chiu , Chih-Chiang Lu , Chia-Liang Hsu , Chun-Hsien Chang
CPC classification number: H01L33/62 , H01L25/167 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/385 , H01L33/48 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066
Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.
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公开(公告)号：US09461209B2
公开(公告)日：2016-10-04
申请号：US14853511
申请日：2015-09-14
Applicant: Epistar Corporation
Inventor： Min-Yen Tsai , Chao-Hsing Chen , Tsung-Hsun Chiang , Wen-Hung Chuang , Bo-Jiun Hu , Tzu-Yao Tseng , Jia-Kuen Wang , Kuan-Yi Lee , Yi-Ming Chen , Chun-Yu Lin , Tsung-Hsien Yang , Tzu-Chieh Hsu , Kun-De Lin , Yao-Ning Chan , Chih-Chiang Lu
CPC classification number: H01L33/382 , H01L33/0012 , H01L33/22 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.
Abstract translation: 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。
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公开(公告)号：US20160284939A1
公开(公告)日：2016-09-29
申请号：US15176890
申请日：2016-06-08
Applicant: EPISTAR CORPORATION
Inventor： Chun-Yu Lin , Yi-Ming Chen , Shih-Chang Lee , Yao-Ning Chan , Tzu-Chieh Hsu
CPC classification number: H01L33/387 , H01L33/06 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2933/0016 , H01L2933/0025
Abstract: An optoelectronic device is provided. The optoelectronic device comprises: an optoelectronic system for emitting light; multiple contact regions on the optoelectronic system and separated from one another; and multiple fingers on the optoelectronic system and opposite to the multiple contact regions; wherein a first contact region in the multiple contact regions is between two adjacent fingers, and a first distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a second distance between the two adjacent fingers.
Abstract translation: 提供了一种光电器件。 光电子器件包括：用于发光的光电子系统; 光电子系统上的多个接触区域并且彼此分离; 和多个手指在光电子系统上并且与多个接触区域相对; 其中所述多个接触区域中的第一接触区域位于两个相邻的指状物之间，并且所述第一接触区域和所述相邻指状物之一之间的第一距离在所述两个相邻指状物之间的第二距离的5％至50％之间。
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公开(公告)号：US10038128B2
公开(公告)日：2018-07-31
申请号：US15702286
申请日：2017-09-12
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Huang , Yao-Ning Chan , Tzu Chieh Hsu , Yi-ming Chen , Hsin-Chih Chiu , Chih-Chiang Lu , Chia-liang Hsu , Chun-Hsien Chang
CPC classification number: H01L33/62 , H01L25/167 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/385 , H01L33/48 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066
Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.
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Patent Agency Ranking
公开(公告)号：US09793458B2
公开(公告)日：2017-10-17
申请号：US15438430
申请日：2017-02-21
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Huang , Yao-Ning Chan , Tzu Chieh Hsu , Yi Ming Chen , Hsin-Chih Chiu , Chih-Chiang Lu , Chia-Liang Hsu , Chun-Hsien Chang
CPC classification number: H01L33/62 , H01L25/167 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/385 , H01L33/48 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066
Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.
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公开(公告)号：US09640728B2
公开(公告)日：2017-05-02
申请号：US15176890
申请日：2016-06-08
Applicant: EPISTAR CORPORATION
Inventor： Chun-Yu Lin , Yi-Ming Chen , Shih-Chang Lee , Yao-Ning Chan , Tzu-Chieh Hsu
CPC classification number: H01L33/387 , H01L33/06 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2933/0016 , H01L2933/0025
Abstract: An optoelectronic device is provided. The optoelectronic device comprises: an optoelectronic system for emitting light; multiple contact regions on the optoelectronic system and separated from one another; and multiple fingers on the optoelectronic system and opposite to the multiple contact regions; wherein a first contact region in the multiple contact regions is between two adjacent fingers, and a first distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a second distance between the two adjacent fingers.
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公开(公告)号：US20160005941A1
公开(公告)日：2016-01-07
申请号：US14853511
申请日：2015-09-14
Applicant: Epistar Corporation
Inventor： Min-Yen Tsai , Chao-Hsing Chen , Tsung-Hsun Chiang , Wen-Hung Chuang , Bo-Jiun Hu , Tzu-Yao Tseng , Jia-Kuen Wang , Kuan-Yi Lee , Yi-Ming Chen , Chun-Yu Lin , Tsung-Hsien Yang , Tzu-Chieh Hsu , Kun-De Lin , Yao-Ning Chan , Chih-Chiang Lu
CPC classification number: H01L33/382 , H01L33/0012 , H01L33/22 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.
Abstract translation: 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。
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公开(公告)号：US12230736B2
公开(公告)日：2025-02-18
申请号：US17211331
申请日：2021-03-24
Applicant: EPISTAR CORPORATION
Inventor： Jian-Zhi Chen , Yen-Chun Tseng , Hui-Fang Kao , Yao-Ning Chan , Yi-Tang Lai , Yun-Chung Chou , Shih-Chang Lee , Chen Ou
Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.
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公开(公告)号：USD1008198S1
公开(公告)日：2023-12-19
申请号：US29822281
申请日：2022-01-07
Applicant: EPISTAR CORPORATION
Designer： Yao-Ning Chan , Tzu-Yun Feng , Yun-Ya Chang
Abstract: FIG. 1 is a perspective view of a light-emitting diode device showing our new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a left side elevational view thereof;
FIG. 5 is a right side elevational view thereof;
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.
The broken line showing is for the purpose of illustrating environmental structure only and forms no part of the claimed design.
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