公开(公告)号：US20200212259A1

公开(公告)日：2020-07-02

申请号：US16728769

申请日：2019-12-27

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Jung-Jen LI

IPC: H01L33/30 ,  H01L33/00

Abstract: The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.

公开(公告)号：US20240363804A1

公开(公告)日：2024-10-31

申请号：US18763617

申请日：2024-07-03

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Jung-Jen LI

IPC: H01L33/30 ,  H01L33/00

CPC classification number: H01L33/30 ,  H01L33/0062 ,  H01L2933/0033

Abstract: The present disclosure provides a semiconductor device including a first semiconductor layer, a light-emitting structure, and a second semiconductor layer. The first semiconductor layer includes a first III-V semiconductor material. The light-emitting structure is on the first semiconductor layer and includes an active structure. The second semiconductor layer is under the first semiconductor layer and includes a second III-V semiconductor material. The third semiconductor layer is between the first semiconductor layer and the light-emitting structure and includes a third III-V semiconductor material. The first semiconductor layer, the second semiconductor layer and the third semiconductor layer includes a first dopant and a third dopant. A concentration of the first dopant in the first semiconductor layer is greater than a concentration of the first dopant in the second semiconductor layer.