公开(公告)号：US20200212261A1

公开(公告)日：2020-07-02

申请号：US16725708

申请日：2019-12-23

Applicant: EPISTAR CORPORATION

Inventor： Shih-Chang LEE ,  Meng-Yang CHEN

IPC: H01L33/30 ,  H01L33/06 ,  H01L33/14

Abstract: A light-emitting device is provided, which includes a first semiconductor structure, an active structure, a second semiconductor structure, and a first blocking layer. The first semiconductor structure has a first conductivity type. The active structure is on the first semiconductor structure. The second semiconductor structure is on the active structure and has a second conductivity type different from the first conductivity type. The first blocking layer is between the second semiconductor structure and the active structure. The first blocking layer substantially does not contain aluminum.

公开(公告)号：US20220285576A1

公开(公告)日：2022-09-08

申请号：US17750232

申请日：2022-05-20

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Yuan-Ting LIN

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/62 ,  H01L33/30 ,  H01L33/10

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

公开(公告)号：US20200212259A1

公开(公告)日：2020-07-02

申请号：US16728769

申请日：2019-12-27

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Jung-Jen LI

IPC: H01L33/30 ,  H01L33/00

Abstract: The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.

公开(公告)号：US20190393380A1

公开(公告)日：2019-12-26

申请号：US16452126

申请日：2019-06-25

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Rong-Ren LEE

IPC: H01L33/18 ,  H01L21/02 ,  H01L33/00 ,  H01L33/30 ,  H01L29/04 ,  H01L29/205 ,  H01L29/778

Abstract: A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.

公开(公告)号：US20250040294A1

公开(公告)日：2025-01-30

申请号：US18896886

申请日：2024-09-25

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Yuan-Ting LIN

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/10 ,  H01L33/30 ,  H01L33/62

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an insulating layer, and a conductive layer. The active region has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The insulating layer covers a portion of the first semiconductor layer. The conductive layer covers the insulating layer and physically contacts the first semiconductor layer. The second semiconductor layer includes a first dopant and the first semiconductor layer includes a second dopant different from the first dopant. The first semiconductor layer includes a quaternary III-V semiconductor material, and the active region includes a quaternary semiconductor material, and the semiconductor device emits a radiation having a peak wavelength between 800 nm and 2000 nm.

公开(公告)号：US20240363804A1

公开(公告)日：2024-10-31

申请号：US18763617

申请日：2024-07-03

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Jung-Jen LI

IPC: H01L33/30 ,  H01L33/00

CPC classification number: H01L33/30 ,  H01L33/0062 ,  H01L2933/0033

Abstract: The present disclosure provides a semiconductor device including a first semiconductor layer, a light-emitting structure, and a second semiconductor layer. The first semiconductor layer includes a first III-V semiconductor material. The light-emitting structure is on the first semiconductor layer and includes an active structure. The second semiconductor layer is under the first semiconductor layer and includes a second III-V semiconductor material. The third semiconductor layer is between the first semiconductor layer and the light-emitting structure and includes a third III-V semiconductor material. The first semiconductor layer, the second semiconductor layer and the third semiconductor layer includes a first dopant and a third dopant. A concentration of the first dopant in the first semiconductor layer is greater than a concentration of the first dopant in the second semiconductor layer.

公开(公告)号：US20230335669A1

公开(公告)日：2023-10-19

申请号：US18213304

申请日：2023-06-23

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Yuan-Ting LIN

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/62 ,  H01L33/30 ,  H01L33/10

CPC classification number: H01L33/002 ,  H01L33/04 ,  H01L33/62 ,  H01L33/305 ,  H01L33/10

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

公开(公告)号：US20240047607A1

公开(公告)日：2024-02-08

申请号：US18381955

申请日：2023-10-19

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN

IPC: H01L33/06 ,  H01L33/50 ,  H01L33/30 ,  H01L33/36 ,  H01L33/10 ,  H01L33/46

CPC classification number: H01L33/06 ,  H01L33/50 ,  H01L33/30 ,  H01L33/36 ,  H01L33/10 ,  H01L33/46

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The first semiconductor structure includes a first confinement layer and a first cladding layer adjacent to the first confinement layer. The second semiconductor structure is located on the first semiconductor structure and includes a second confinement layer. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The first confinement layer and the second confinement layer are adjacent to the light emitting structure. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material including InGaAsP, AlGaInAs or InGaNAs.

公开(公告)号：US20230101241A1

公开(公告)日：2023-03-30

申请号：US18075987

申请日：2022-12-06

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN

IPC: H01L33/06 ,  H01L33/50 ,  H01L33/30 ,  H01L33/36

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing aluminum and a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The light-emitting structure emits an incoherent light. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material which includes indium (In). The well layer has a first In content percentage larger than 0.53, and the barrier layer has a second In content percentage less than 0.53.

公开(公告)号：US20200152830A1

公开(公告)日：2020-05-14

申请号：US16680183

申请日：2019-11-11

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN

IPC: H01L33/06 ,  H01L33/30 ,  H01L33/50

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a multiple quantum well structure. The multiple quantum well structure contains aluminum and includes a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. In each semiconductor stack, the well layer has a thickness larger than a thickness of the barrier layer.