公开(公告)号：US20240213403A1

公开(公告)日：2024-06-27

申请号：US18397702

申请日：2023-12-27

Applicant: EPISTAR CORPORATION

Inventor： Tien-Yu WANG ,  Yung-Hsiang LIN

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/20 ,  H01L33/48 ,  H01L33/60

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/20 ,  H01L33/486 ,  H01L33/60

Abstract: A semiconductor device includes a substrate having an upper surface, a buffer layer formed on the upper surface, and an element structure formed on the buffer layer. The substrate includes a plurality of holes extending from the upper surface of the substrate to an inside of the substrate and forming a plurality of openings at the upper surface of the substrate. In a cross-sectional view of the semiconductor device, at least two of the holes have different depths.