公开(公告)号：US20240213403A1

公开(公告)日：2024-06-27

申请号：US18397702

申请日：2023-12-27

Applicant: EPISTAR CORPORATION

Inventor： Tien-Yu WANG ,  Yung-Hsiang LIN

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/20 ,  H01L33/48 ,  H01L33/60

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/20 ,  H01L33/486 ,  H01L33/60

Abstract: A semiconductor device includes a substrate having an upper surface, a buffer layer formed on the upper surface, and an element structure formed on the buffer layer. The substrate includes a plurality of holes extending from the upper surface of the substrate to an inside of the substrate and forming a plurality of openings at the upper surface of the substrate. In a cross-sectional view of the semiconductor device, at least two of the holes have different depths.

公开(公告)号：US20230135799A1

公开(公告)日：2023-05-04

申请号：US18091035

申请日：2022-12-29

Applicant: EPISTAR CORPORATION

Inventor： Aurelien GAUTHIER-BRUN ,  Chao-Hsing CHEN ,  Chang-Tai HSAIO ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  Jia-Kuen WANG ,  Yung-Hsiang LIN

IPC: H01L33/38 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L33/18

Abstract: A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.

公开(公告)号：US20230335975A1

公开(公告)日：2023-10-19

申请号：US17722804

申请日：2022-04-18

Applicant: EPISTAR CORPORATION

Inventor： Yung-Hsiang LIN

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/2054 ,  H01S5/22 ,  H01S5/343

Abstract: A light-emitting device is provided. An active layer is disposed on a substrate and between the first semiconductor layer and the second semiconductor layer. The first aluminum-containing semiconductor layer is disposed between the substrate and the first semiconductor layer, and a first aluminum composition ratio of the first aluminum-containing semiconductor layer is greater than that of the first semiconductor layer. The second aluminum-containing semiconductor layer is disposed between the first aluminum-containing semiconductor layer and the first semiconductor layer, and a second aluminum composition ratio of the second aluminum-containing semiconductor layer is greater than that of the first semiconductor layer. The stack structure is disposed between the first and second aluminum-containing semiconductor layers, and the stack structure includes first, second, and third indium-containing semiconductor layers stacked in sequence. The first, second, and third indium-containing semiconductor layers are made of Ina1Alb1Ga1-a1-b1N (0

公开(公告)号：US20190019919A1

公开(公告)日：2019-01-17

申请号：US16035299

申请日：2018-07-13

Applicant: EPISTAR CORPORATION

Inventor： Aurelien GAUTHIER-BRUN ,  Chao-Hsing CHEN ,  Chang-Tai HSAIO ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  Jia-Kuen WANG ,  Yung-Hsiang LIN

IPC: H01L33/38 ,  H01L33/08 ,  H01L33/24 ,  H01L33/44 ,  H01L33/40 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46

Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.

公开(公告)号：US20180062043A1

公开(公告)日：2018-03-01

申请号：US15686314

申请日：2017-08-25

Applicant: EPISTAR CORPORATION

Inventor： Chang-Tai HISAO ,  I-Lun MA ,  Hao-Yu CHEN ,  Shu-Fen HU ,  Ru-Shi LIU ,  Chih-Ming WANG ,  Chun-Yuan CHEN ,  Yih-Hua RENN ,  Chien-Hsin WANG ,  Yung-Hsiang LIN

IPC: H01L33/42 ,  H01L33/32

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.