公开(公告)号：US20180309038A1

公开(公告)日：2018-10-25

申请号：US16019136

申请日：2018-06-26

Applicant: EPISTAR CORPORATION

Inventor： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/62 ,  H01L33/60 ,  H01L33/42 ,  H01L33/32 ,  H01L27/15 ,  H01L33/08 ,  H01L33/06 ,  H01L33/30

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20140093991A1

公开(公告)日：2014-04-03

申请号：US14097150

申请日：2013-12-04

Applicant: Epistar Corporation

Inventor： Chien-Kai CHUNG ,  Ya Lan YANG ,  Ting-Chia KO ,  Tsun-Kai KO ,  Jung-Min HWANG ,  Schang-Jing HON ,  De-Shan KUO ,  Chien-Fu SHEN ,  Ta-Cheng HSU ,  Min-Hsun HSIEH

IPC: H01L33/00 ,  H01L21/304 ,  H01L21/02

CPC classification number: H01L33/005 ,  H01L21/02057 ,  H01L21/3043 ,  H01L33/0095

Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.

Abstract translation: 一种制造发光器件的方法，包括以下步骤：通过激光束切割衬底以在衬底中形成空腔，并通过切割直接在衬底上产生副产物，并通过化学物质除去副产物 溶液在预定的清洁温度下含有酸。

公开(公告)号：US20210074890A1

公开(公告)日：2021-03-11

申请号：US17102171

申请日：2020-11-23

Applicant: EPISTAR CORPORATION

Inventor： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/42 ,  H01L33/40 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20220376143A1

公开(公告)日：2022-11-24

申请号：US17879547

申请日：2022-08-02

Applicant: EPISTAR CORPORATION

Inventor： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/42 ,  H01L33/40 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20170069810A1

公开(公告)日：2017-03-09

申请号：US15357334

申请日：2016-11-21

Applicant: EPISTAR CORPORATION

Inventor： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/62 ,  H01L33/60 ,  H01L33/42 ,  H01L33/30 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.

Abstract translation: 发光器件包括第一半导体层; 在第一半导体层上的有源层; 有源层上的第二半导体层; 以及在所述第二半导体层上的电极结构，其中所述电极结构包括在所述第二半导体层上的粘附层，所述粘合层上的导电层和所述导电层上的接合层，并且其中所述电极结构包括中心区域 和边缘区域，电极结构的边缘区域的每一层的厚度小于中心区域的边缘区域的厚度。

公开(公告)号：US20190334069A1

公开(公告)日：2019-10-31

申请号：US16510502

申请日：2019-07-12

Applicant: EPISTAR CORPORATION

Inventor： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/62 ,  H01L33/42 ,  H01L33/06 ,  H01L33/08 ,  H01L33/60 ,  H01L33/32 ,  H01L33/30 ,  H01L27/15

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20180138380A1

公开(公告)日：2018-05-17

申请号：US15854462

申请日：2017-12-26

Applicant: EPISTAR CORPORATION

Inventor： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/62 ,  H01L33/60 ,  H01L33/42 ,  H01L33/32 ,  H01L27/15 ,  H01L33/08 ,  H01L33/06 ,  H01L33/30

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20160172557A1

公开(公告)日：2016-06-16

申请号：US15049917

申请日：2016-02-22

Applicant: EPISTAR CORPORATION

Inventor： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/08

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

Abstract translation: 1.一种发光装置，包括：基板; 半导体堆叠层，包括在所述衬底上的第一类型半导体层，所述第一半导体层上的有源层和所述有源层上的第二半导体层; 以及在所述第二半导体层上的电极结构，其中所述电极结构包括在所述接合层和所述导电层之间的接合层，导电层和第一阻挡层; 其中导电层具有比接合层更高的标准氧化电位。