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公开(公告)号：US20230005984A1
公开(公告)日：2023-01-05
申请号：US17901655
申请日：2022-09-01
Applicant: EPISTAR CORPORATION
Inventor： Po-Shun CHIU , Tsung-Hsun CHIANG , Liang-Sheng CHI , Jing JIANG , Jie CHEN , Tzung- Shiun YEH , Hsin-Ying WANG , Hui-Chun YEH , Chien-Fu SHEN
Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
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公开(公告)号：US20210074890A1
公开(公告)日：2021-03-11
申请号：US17102171
申请日：2020-11-23
Applicant: EPISTAR CORPORATION
Inventor： De-Shan KUO , Ting-Chia KO , Chun-Hsiang TU , Po-Shun CHIU
IPC: H01L33/42 , H01L33/40 , H01L27/15 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/60 , H01L33/62
Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
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公开(公告)号：US20200243598A1
公开(公告)日：2020-07-30
申请号：US16750227
申请日：2020-01-23
Applicant: EPISTAR CORPORATION
Inventor： Po-Shun CHIU , Tsung-Hsun CHIANG , Liang-Sheng CHI , Jing JIANG , Jie CHEN , Tzung-Shiun YEH , Hsin-Ying WANG , Hui-Chun YEH , Chien-Fu SHEN
Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
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公开(公告)号：US20170365741A1
公开(公告)日：2017-12-21
申请号：US15692759
申请日：2017-08-31
Applicant: EPISTAR CORPORATION
Inventor： Chien-Kai CHUNG , Po-Shun CHIU , Hsin-Ying WANG , De-Shan KUO , Tsun-Kai KO , Yu-Ting HUANG
CPC classification number: H01L33/22 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382
Abstract: A light-emitting device includes: a rectangular shape with a 1st side, a 2nd side opposite to the 1st side, and a 3rd side connecting the 1st and the 2nd sides; a first electrode pad formed adjacent to the 3rd side; a second electrode pad formed adjacent to the 2nd side; a first extension electrode, extending from the first electrode pad in a direction away from the 3rd side and bended toward the 2nd side; and a second extension electrode, including a first and a second branches respectively extending from the second electrode pad; wherein a distance between the first electrode pad and the 3rd side is smaller than a distance between the second electrode pad and the 3rd side; wherein an end portion of the first branch includes a first arc bending to the 3rd side and a minimum distance between the first branch and the 1st side is smaller than a minimum distance between the second branch and the 1st side.
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公开(公告)号：US20150060909A1
公开(公告)日：2015-03-05
申请号：US14013166
申请日：2013-08-29
Applicant: Epistar Corporation
Inventor： Juin-Yang CHEN , De-Shan KUO , Chun-Hsiang TU , Po-Shun CHIU , Chien-Kai CHUNG , Hui-Chun YEH , Min-Yen TSAI , Tsun-Kai KO , Chun-Teng KO
CPC classification number: H01L33/38 , H01L33/0095 , H01L33/22 , H01L33/42
Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.
Abstract translation: 发光器件包括：第一半导体层; 透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层; 以及形成在所述透明导电氧化物层上的金属层，其中所述金属层可透过从所述有源层发射的光并且包括图案。
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Patent Agency Ranking
公开(公告)号：US20220376143A1
公开(公告)日：2022-11-24
申请号：US17879547
申请日：2022-08-02
Applicant: EPISTAR CORPORATION
Inventor： De-Shan KUO , Ting-Chia KO , Chun-Hsiang TU , Po-Shun CHIU
IPC: H01L33/42 , H01L33/40 , H01L27/15 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/60 , H01L33/62
Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
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公开(公告)号：US20190051791A1
公开(公告)日：2019-02-14
申请号：US16159251
申请日：2018-10-12
Applicant: EPISTAR CORPORATION
Inventor： Po-Shun CHIU , De-Shan KUO , Jhih-Jheng YANG , Jiun-Ru HUANG , Jian-Huei LI , Ying-Chieh CHEN , Zi-Jin LIN
CPC classification number: H01L33/0095 , H01L33/10 , H01L33/22
Abstract: A method of manufacturing a light-emitting device is disclosed. The method includes providing a light-emitting diode wafer, including a substrate and a semiconductor stack on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser on the light-emitting diode wafer and irradiating the light-emitting diode wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing an etching process; providing and focusing a second laser on an interior of the substrate to form one or a plurality of textured areas in the substrate; and providing force on the light-emitting diode wafer to separate the light-emitting diode wafer into a plurality of light-emitting diode chips along the plurality of scribing lines.
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公开(公告)号：US20180315889A1
公开(公告)日：2018-11-01
申请号：US16030437
申请日：2018-07-09
Applicant: EPISTAR CORPORATION
Inventor： Chien-Kai CHUNG , Po-Shun CHIU , Hsin-Ying WANG , De-Shan KUO , Tsun-Kai KO , Yu-Ting HUANG
CPC classification number: H01L33/22 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382
Abstract: A light-emitting device includes: a rectangular shape with a first side, a second side opposite to the first side, and a third side connecting the first side and the second side; a light-emitting stack, comprising a lower semiconductor layer, an upper semiconductor layer, and an active layer between the lower semiconductor layer and the upper semiconductor layer; a first electrode formed on the lower semiconductor layer, comprising a first electrode pad and a first extension electrode; a second electrode formed on the upper semiconductor layer, comprising a second electrode pad and a second extension electrode; and a first current blocking layer formed between the lower semiconductor layer and the first electrode pad, wherein the first current blocking layer comprises a top surface and side surfaces; wherein the first electrode pad covers the top surface and the side surfaces of the first current blocking layer and contacts the lower semiconductor layer.
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公开(公告)号：US20170069810A1
公开(公告)日：2017-03-09
申请号：US15357334
申请日：2016-11-21
Applicant: EPISTAR CORPORATION
Inventor： De-Shan KUO , Ting-Chia KO , Chun-Hsiang TU , Po-Shun CHIU
CPC classification number: H01L33/62 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/42 , H01L33/60
Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.
Abstract translation: 发光器件包括第一半导体层; 在第一半导体层上的有源层; 有源层上的第二半导体层; 以及在所述第二半导体层上的电极结构，其中所述电极结构包括在所述第二半导体层上的粘附层，所述粘合层上的导电层和所述导电层上的接合层，并且其中所述电极结构包括中心区域 和边缘区域，电极结构的边缘区域的每一层的厚度小于中心区域的边缘区域的厚度。
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公开(公告)号：US20180309038A1
公开(公告)日：2018-10-25
申请号：US16019136
申请日：2018-06-26
Applicant: EPISTAR CORPORATION
Inventor： De-Shan KUO , Ting-Chia KO , Chun-Hsiang TU , Po-Shun CHIU
CPC classification number: H01L33/62 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/42 , H01L33/60
Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
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