公开(公告)号：US20190165204A1

公开(公告)日：2019-05-30

申请号：US16196793

申请日：2018-11-20

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HU ,  Wei-Chieh LIEN ,  Chen OU ,  Chia-Ming LIU ,  Tzu-Yi CHI

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32 ,  H01L33/12

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

公开(公告)号：US20210057603A1

公开(公告)日：2021-02-25

申请号：US17076511

申请日：2020-10-21

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HU ,  Wei-Chieh LIEN ,  Chen OU ,  Chia-Ming LIU ,  Tzu-Yi CHI

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01L33/02

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

公开(公告)号：US20200287082A1

公开(公告)日：2020-09-10

申请号：US16881344

申请日：2020-05-22

Applicant: EPISTAR CORPORATION

Inventor： Jing-Jie DAI ,  Tzu-Chieh HU

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L33/04

Abstract: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer including a first dopant of a first conductivity type and a second dopant of a second conductivity type, wherein the first dopant has a doping concentration, and the first conductivity type is different from the second conductivity type; a third semiconductor layer on the second semiconductor layer, wherein the third semiconductor layer includes a third dopant including a doping concentration higher than the doping concentration of the first dopant; and an active region between the first semiconductor layer and the second semiconductor layer; wherein the second semiconductor layer includes a bottom surface facing the active region, and the active region includes a top surface facing the second semiconductor layer, and a distance between the bottom surface of the second semiconductor layer and the top surface of the active region is not less than 2 nm.

公开(公告)号：US20190157511A1

公开(公告)日：2019-05-23

申请号：US16182849

申请日：2018-11-07

Applicant: EPISTAR CORPORATION

Inventor： Jing-Jie DAI ,  Tzu-Chieh HU

IPC: H01L33/32

Abstract: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer including a first dopant of a first conductivity type and a second dopant of a second conductivity type, wherein the first dopant has a doping concentration, and the first conductivity type is different from the second conductivity type; a third semiconductor layer on the second semiconductor layer, wherein the third semiconductor layer includes a third dopant including a doping concentration higher than the doping concentration of the first dopant; and an active region between the first semiconductor layer and the second semiconductor layer; wherein the second semiconductor layer includes a bottom surface facing the active region, and the active region includes a top surface facing the second semiconductor layer, and a distance between the bottom surface of the second semiconductor layer and the top surface of the active region is not less than 2 nm.