公开(公告)号：US20250089400A1

公开(公告)日：2025-03-13

申请号：US18243985

申请日：2023-09-08

Applicant: EPISTAR CORPORATION

Inventor： Hao-Chun LIANG ,  Yi-Shan TSAI ,  Wei-Shan YEOH ,  Yao-Ning CHAN ,  Hsuan-Le LIN ,  Jiong-Chaso SU ,  Shih-Chang LEE ,  Chang-Da TSAI

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/30

Abstract: A semiconductor device, including a base and a semiconductor stack. The semiconductor stack includes a first semiconductor structure located on the base, a second semiconductor structure located on the first semiconductor structure, and an active structure located between the first semiconductor structure and the second semiconductor structure. The active structure includes two confinement layers and a well layer located between the two confinement layers. One of the confinement layers includes Alx1Ga1-x1As, and x1 is equal to or larger than 0.25 and equal to or smaller than 0.4. The well layer includes Inx2Ga1-x2As, and x2 is equal to or larger than 0.25 and equal to or smaller than 0.3. The one of the confinement layers and the well layer respectively have a first thickness in a range of 200 nm to 400 nm and a second thickness in a range of 3 nm to 6 nm.

公开(公告)号：US20230343896A1

公开(公告)日：2023-10-26

申请号：US18138665

申请日：2023-04-24

Applicant: EPISTAR CORPORATION

Inventor： Wei-Shan YEOH ,  Tzu-Yun FENG

IPC: H01L33/38 ,  H01L33/60

CPC classification number: H01L33/38 ,  H01L33/60

Abstract: A semiconductor device is provided, which includes a semiconductor epitaxial structure, a metal contact structure, and a metal oxide layer. The semiconductor epitaxial structure includes an active structure and a semiconductor contact layer located on the active structure along a vertical direction. The metal contact structure directly contacts the semiconductor contact layer. The metal oxide layer is overlapped with the metal contact structure in a horizontal direction. The metal oxide layer and the metal contact structure are separated in the horizontal direction.