公开(公告)号：US20220328720A1

公开(公告)日：2022-10-13

申请号：US17848079

申请日：2022-06-23

Applicant: EPISTAR CORPORATION

Inventor： Peng Ren CHEN ,  Yu-Shan CHIU ,  Wen-Hsiang LIN ,  Shih-Wei WANG ,  Chen OU

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/32 ,  H01L33/12 ,  H01L33/06 ,  H01L33/02

Abstract: A method of manufacturing a light-emitting device, including: providing a substrate structure including a base portion and wherein the base portion includes a surface; performing a patterning step to form a plurality of protrusions, wherein the plurality of protrusions are arranged on the surface of the base portion; forming a buffer layer on the surface of the base portion by physical vapor deposition, wherein the buffer layer covers the protrusions; and forming III-V compound semiconductor layers on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 μm; and wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.

公开(公告)号：US20190334059A1

公开(公告)日：2019-10-31

申请号：US16397775

申请日：2019-04-29

Applicant: EPISTAR CORPORATION

Inventor： Peng Ren CHEN ,  Yu-Shan CHIU ,  Wen-Hsiang LIN ,  Shih-Wei WANG ,  Chen OU

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 μm; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.