公开(公告)号：US20220173272A1

公开(公告)日：2022-06-02

申请号：US17674690

申请日：2022-02-17

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Wen-Hsiang LIN ,  Pei-Chi CHIANG ,  Yi-Wen KU

IPC: H01L33/10 ,  F21V8/00 ,  H01L33/00 ,  H01L33/20

Abstract: A light-emitting package, includes: a housing including an opening; a lead frame covered by the housing; a light-emitting device, mounted in the opening and electrically connected to the lead frame, the light-emitting device including: a substrate including: a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; a semiconductor stack on the main surface, the semiconductor stack including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area not covered by the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon; and a filling material filling in the opening and covering the light-emitting device.

公开(公告)号：US20140017840A1

公开(公告)日：2014-01-16

申请号：US14029297

申请日：2013-09-17

Applicant: EPISTAR CORPORATION

Inventor： Chen OU ,  Wen-Hsiang LIN ,  Shih-Kuo LAI

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12

Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

Abstract translation: 氮化物系发光器件包括基板和在该基板上形成的多个层，其顺序如下：由氮形成的基于氮化物的缓冲层，第一III族元素和任选的第二III族元素， 第一氮化物基半导体层，发光层和第二氮化物基半导体层。

公开(公告)号：US20220328720A1

公开(公告)日：2022-10-13

申请号：US17848079

申请日：2022-06-23

Applicant: EPISTAR CORPORATION

Inventor： Peng Ren CHEN ,  Yu-Shan CHIU ,  Wen-Hsiang LIN ,  Shih-Wei WANG ,  Chen OU

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/32 ,  H01L33/12 ,  H01L33/06 ,  H01L33/02

Abstract: A method of manufacturing a light-emitting device, including: providing a substrate structure including a base portion and wherein the base portion includes a surface; performing a patterning step to form a plurality of protrusions, wherein the plurality of protrusions are arranged on the surface of the base portion; forming a buffer layer on the surface of the base portion by physical vapor deposition, wherein the buffer layer covers the protrusions; and forming III-V compound semiconductor layers on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 μm; and wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.

公开(公告)号：US20200243714A1

公开(公告)日：2020-07-30

申请号：US16749884

申请日：2020-01-22

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Wen-Hsiang LIN ,  Pei-Chi CHIANG ,  Yi-Wen KU

IPC: H01L33/10 ,  F21V8/00 ,  H01L33/00 ,  H01L33/20

Abstract: A light-emitting device, includes: a substrate, including a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; and a semiconductor stack on the main surface, including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area surrounding the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon.

公开(公告)号：US20190334059A1

公开(公告)日：2019-10-31

申请号：US16397775

申请日：2019-04-29

Applicant: EPISTAR CORPORATION

Inventor： Peng Ren CHEN ,  Yu-Shan CHIU ,  Wen-Hsiang LIN ,  Shih-Wei WANG ,  Chen OU

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 μm; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.