公开(公告)号：US20220285576A1

公开(公告)日：2022-09-08

申请号：US17750232

申请日：2022-05-20

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Yuan-Ting LIN

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/62 ,  H01L33/30 ,  H01L33/10

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

公开(公告)号：US20250040294A1

公开(公告)日：2025-01-30

申请号：US18896886

申请日：2024-09-25

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Yuan-Ting LIN

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/10 ,  H01L33/30 ,  H01L33/62

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an insulating layer, and a conductive layer. The active region has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The insulating layer covers a portion of the first semiconductor layer. The conductive layer covers the insulating layer and physically contacts the first semiconductor layer. The second semiconductor layer includes a first dopant and the first semiconductor layer includes a second dopant different from the first dopant. The first semiconductor layer includes a quaternary III-V semiconductor material, and the active region includes a quaternary semiconductor material, and the semiconductor device emits a radiation having a peak wavelength between 800 nm and 2000 nm.

公开(公告)号：US20230335669A1

公开(公告)日：2023-10-19

申请号：US18213304

申请日：2023-06-23

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang CHEN ,  Yuan-Ting LIN

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/62 ,  H01L33/30 ,  H01L33/10

CPC classification number: H01L33/002 ,  H01L33/04 ,  H01L33/62 ,  H01L33/305 ,  H01L33/10

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.