DUAL-BAND VOLTAGE-CONTROLLED OSCILLATOR ARRANGEMENT
    6.
    发明申请
    DUAL-BAND VOLTAGE-CONTROLLED OSCILLATOR ARRANGEMENT 审中-公开
    双带电压控制振荡器布置

    公开(公告)号:WO2009145686A8

    公开(公告)日:2010-04-29

    申请号:PCT/SE2008050637

    申请日:2008-05-30

    Inventor: BAO MINGQUAN

    Abstract: In a dual-band capable voltage-controlled oscillator (VCO) device at least two voltage-controlled oscillator units (VCO1, VCO2 ) are coupled via a reactive component (A) and each said at least one voltage-controlled oscillator unit (VCO1, VCO2) further being connected to at least a respective external switching device (B1, B2 ) adapted to control an operating frequency of the (VCO) device.

    Abstract translation: 在双频带能力的压控振荡器(VCO)装置中,至少两个压控振荡器单元(VCO1,VCO2)通过无功分量(A)和每个所述至少一个压控振荡器单元(VCO1, VCO2)进一步连接到适于控制(VCO)设备的工作频率的至少一个相应的外部开关器件(B1,B2)。

    7.
    发明专利
    未知

    公开(公告)号:AT506745T

    公开(公告)日:2011-05-15

    申请号:AT05794514

    申请日:2005-10-20

    Abstract: The present invention relates to a voltage-to-current transconductance stage arrangement comprising a single-ended input, an emitter-coupled pair of transistors, comprising a first transistor and a second transistor, the emitter of a third transistor, being connected to the collector of said first transistor, and differential output. It further comprises at least one common-collector transistor comprising a fourth transistor connected to the base of said second transistor preferably or optionally also and a fifth transistor connected to the base of said third transistor. The size of said fourth, or fourth and fifth transistors considerably exceed the sizes of said second and third transistors. They are biased at 'off-state'. An extra inductor at the collector of the transistor may be applied to further increase linearity.

    10.
    发明专利
    未知

    公开(公告)号:AT426265T

    公开(公告)日:2009-04-15

    申请号:AT05817018

    申请日:2005-11-23

    Abstract: The present invention relates to a sub-harmonically pumped conversion mixer arrangement that includes a transistor arrangement and transistor terminals for application of a local oscillator, LO-, signal and application of a radio frequency, RF-, signal and for extraction of a mixed intermediate frequency, IF-, signal. The transistor arrangement includes at least one NMOS transistor and at least one PMOS transistor. The drain of the at least one NMOS transistor is interconnected with the drain of the at least one PMOS transistor, and in that the gate of the at least one PMOS transistor is interconnected with the gate of the at least one NMOS transistor.

Patent Agency Ranking