公开(公告)号：SG187357A1

公开(公告)日：2013-02-28

申请号：SG2012053526

申请日：2012-07-19

Applicant: ESPROS PHOTONICS AG

Inventor： POPP MARTIN ,  BEAT DE COI ,  MARCO ANNESE

Abstract: - 24 -AbstractSemiconductor structure for photon detectionWhat is proposed is a semiconductor structure (1, 101, 201) for photon detection, comprising: a substrate (2, 102, 202) composed of a semiconductor material having a first doping, a contact region (3, 103, 203) fitted at the frontside of the substrate, a bias layer (4, 104, 204) composed of a semiconductor material having a second doping, which is arranged on the backside of the substrate at a distance from the contact region, wherein the contact region at least partly lies opposite the bias layer, such that an overlap region is present in a lateral direction, a guard ring (5, 105, 205), which is arranged at the frontside of the substrate and surrounds the contact region, wherein a reverse voltage can be applied between the contact region and the guard ring. In order to enable more cost-effective production, the overlap region has a lateral extent amounting to at least one quarter of the distance between contact region and bias layer.Figure 1

公开(公告)号：SG188054A1

公开(公告)日：2013-03-28

申请号：SG2012060703

申请日：2012-08-15

Applicant: ESPROS PHOTONICS AG

Inventor： BEAT DE COI ,  MARCO ANNESE ,  MARTIN POPP

Abstract: 16AbstractMethod for producing semiconductor components on a substrate, and substrate comprising semiconductor componentsA method for producing semiconductor components on a substrate comprising photolithographic patterning steps, in which method, on the substrate, a first layer to be patterned is applied and a second layer serving as a mask layer for the first layer to be patterned is applied, wherein a third layer (401) serving as a mask for the second layer is applied, and wherein at least two photolithographic patterning processes are carried out successively for the second layer, wherein, during one of the patterning processes, after the production of a structure made from a photosensitive layer for the provision of a mask layer for a patterning process at the third layer (401), positive ramp angles a are produced at the patterning edges of the third layer, as a result of which the structures (420) remaining free, given a thickness h of the third layer, decrease in size by a value D = 2*h/tana, and wherein, during the other of the patterning processes, after the production of a structure made from a photosensitive layer for the provision of a mask layer for a patterning process at the third layer (401), negative ramp angles ß are produced at the patterning edges of the third layer, wherein the remaining structures, given a thickness h of the third layer, decrease in size by a value W = 2*h/tanO, and wherein the second layer is patterned on the basis of the respectively patterned third layer (401).