公开(公告)号：AU2005313443B2

公开(公告)日：2011-08-04

申请号：AU2005313443

申请日：2005-12-06

Applicant: ESSILOR INT ,  IBM

Inventor： HEINZ SCHMID ,  JEAN-PAUL CANO ,  CEDRIC BEGON

IPC: G03H1/00 ,  B24B13/005 ,  B29D11/00 ,  G03H1/08

Abstract: A method for printing a binary hologram on a manufactured product comprises the provision of a stamp with a pattern corresponding to the hologram (30). The product is initially coated with a metal layer. The stamp is inked with a masking solution (40) and pressed against the manufactured product (50). Then, the hologram print is obtained by selective etching of parts of the metal layer which are not masked (60). The method is adapted for printing holograms on optical lenses.

公开(公告)号：IN266728B

公开(公告)日：2015-05-28

申请号：IN1959KON2007

申请日：2007-05-31

Applicant: ESSILOR INT ,  IBM

Inventor： CÉDRIC BEGON ,  JEAN-PAUL CANO ,  HEINZ SCHMID

IPC: G03H1/00 ,  B29D11/00

Abstract: A method for printing a binary hologram on a manufactured product comprises the provision of a stamp with a pattern corresponding to the hologram (30). The product is initially coated with a metal layer. The stamp is inked with a masking solution (40) and pressed against the manufactured product (50). Then, the hologram print is obtained by selective etching of parts of the metal layer which are not masked (60). The method is adapted for printing holograms on optical lenses.

公开(公告)号：GB2535418A

公开(公告)日：2016-08-17

申请号：GB201610764

申请日：2014-12-08

Applicant: IBM

Inventor： MATTIAS BENGT BORG ,  KIRSTEN EMILIE MOSELUND ,  HEIKE E RIEL ,  HEINZ SCHMID

IPC: H01L21/02

Abstract: Methods are provided for fabricating semiconductor nanowires 12, 40, 41, 45, 57 on a substrate 1, 20, 50. A nanowire template 3, 6; 22, 24; 31, 32 is formed on the substrate. The nanowire template defines an elongate tunnel 8, 26, 33 which extends, laterally over the substrate, between an opening 7, 25 in the template and a seed surface 10, 27, 34. The seed surface 10, 27, 34 is exposed to the tunnel and of area up to about 2x 4 10 nm 2. The semiconductor nanowire is selectively grown, via said opening, in the template from the seed surface. The area of the seed surface 10, 27, 34 is preferably such that growth of the nanowire proceeds from a single nucleation point on the seed surface.

公开(公告)号：GB2535418B

公开(公告)日：2018-10-24

申请号：GB201610764

申请日：2014-12-08

Applicant: IBM

Inventor： MATTIAS BENGT BORG ,  KIRSTEN EMILIE MOSELUND ,  HEIKE E RIEL ,  HEINZ SCHMID

IPC: H01L21/02

公开(公告)号：GB2532786A

公开(公告)日：2016-06-01

申请号：GB201421182

申请日：2014-11-28

Applicant: IBM

Inventor： MATTIAS BENGT BORG ,  KIRSTEN EMILIE MOSELUND ,  HEIKE E RIEL ,  HEINZ SCHMID

IPC: H01L21/02

Abstract: A method for manufacturing a semiconductor structure 1 comprises: providing a substrate 2 including a first semiconductor material; forming a dielectric layer 3 on a surface of the substrate 2; forming an opening in the dielectric layer 3 having a bottom reaching the substrate 2; providing a second semiconductor material 7B in the opening and on the substrate 2, the second semiconductor material 7B being encapsulated by a further dielectric material 6 forming a filled cavity; melting the second semiconductor material 7B in the cavity; recrystallizing the second semiconductor material 7B in the cavity; laterally removing the second semiconductor material 7B at least partially for forming a lateral surface at the second semiconductor material 7B; and forming a third semiconductor material 11 on the lateral surface of the second semiconductor material 7B. Also disclosed is the semiconductor structure 1 produced by the above method. The invention seeks to form compound semiconductor layers on silicon substrates without lattice mismatch deformations.