公开(公告)号：WO9950874A3

公开(公告)日：2000-02-17

申请号：PCT/US9905584

申请日：1999-03-16

Applicant: ETEC SYSTEMS INC

Inventor： LEE KIM Y ,  CHANG TAI-HON PHILIP ,  MANKOS MARIAN ,  BERGLUND C NEIL

IPC: H01J9/12 ,  G03F7/20 ,  H01J1/34 ,  H01J37/063 ,  H01J37/073 ,  H01J3/02

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70375 ,  H01J1/34 ,  H01J37/073 ,  H01J2237/31779

Abstract: A photocathode (300) having a gate electrode (307) so that modulation of the resulting electron beam is accomplished independently of the light beam (303). The photocathode includes a transparent substrate (301), a photoemitter (302), and an electrically separate gate electrode (307) surrounding an emission region of the photoemitter. The electron beam emission from the emission region is modulated by voltages supplied to the gate electrode. In addition, the gate electrode may have multiple segments that are capable of shaping the electron beam in response to voltages supplied individually to each of the multiple segments.

Abstract translation: 具有栅电极（307）的光电阴极（300），使得所得电子束的调制独立于光束（303）来实现。 光电阴极包括透明基板（301），光发射器（302）和围绕发光体的发射区域的电分离的栅电极（307）。 来自发射区域的电子束发射由供给栅电极的电压调制。 此外，栅电极可以具有多个段，其能够响应于单独提供给多个段中的每一个的电压而使电子束成形。

公开(公告)号：AU1960601A

公开(公告)日：2001-05-10

申请号：AU1960601

申请日：2000-08-31

Applicant: ETEC SYSTEMS INC

Inventor： MANKOS MARIAN ,  CHANG TAI-HON P ,  LEE KIM Y ,  BERGLUND C NEIL

IPC: G03F7/20 ,  H01J37/073 ,  H01J37/28 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

Abstract: A lithographic apparatus using an array of charged particle (electron) beam columns, where the array includes a plurality of charged particle beam columns that each selectively expose a target to a plurality of charged particle beams. Each charged particle beam column includes a beam source that selectively generates a plurality of charged particle beams; an anode coaxial with the charged particle beams and that accelerates the plurality of charged particle beams from the beam source; and a lens coaxial with the charged particle beams and that demagnifies the charged particle beams. The beam source is a photocathode array that selectively supplies multiple electron beams when illuminated.

公开(公告)号：CA2289131A1

公开(公告)日：1999-10-07

申请号：CA2289131

申请日：1999-03-16

Applicant: ETEC SYSTEMS INC

Inventor： MANKOS MARIAN ,  CHANG TAI-HON PHILIP ,  LEE KIM Y ,  BERGLUND C NEIL

IPC: H01J9/12 ,  G03F7/20 ,  H01J1/34 ,  H01J37/063 ,  H01J37/073 ,  H01J29/04

Abstract: A photocathode having a gate electrode so that modulation of the resulting electron beam is accomplished independently of the laser beam. The photocathode includes a transparent substrate, a photoemitter, and an electrically separate gate electrode surrounding an emission region of the photoemitter. The electron beam emission from the emission region is modulated by voltages supplied to the gate electrode. In addition, the gate electrode may have multiple segments that are capable of shaping the electron beam in response to voltages supplied individually to each of the multiple segments.

公开(公告)号：CA2288021A1

公开(公告)日：1999-09-23

申请号：CA2288021

申请日：1999-03-19

Applicant: ETEC SYSTEMS INC

Inventor： BERGLUND C NEIL ,  CHANG TAI-HON PHILIP

IPC: G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

Abstract: In electron beam lithography, a lithography system uses multiple microcolumns in an array to increase throughput for direct writing of semiconductor wafers. The mismatch between the microcolumn array and the semiconductor die periodicity is resolved by using only one microcolumn to scan each individual die. This is accomplished by assuring that the stage carrying the semiconductor wafer moves a total distance in each of the X and Y directions which is greater than the pitch between adjacent die. Hence each die is scanned by only a single microcolumn although at possibly different times during the total stage motion.

公开(公告)号：CA2139637A1

公开(公告)日：1994-12-08

申请号：CA2139637

申请日：1994-05-06

Applicant: ETEC SYSTEMS INC

Inventor： MURAY ANDREW J ,  ABBOUD FRANK E ,  BERGLUND C NEIL

IPC: H01J37/305 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

Abstract: A raster scan lithography system is modified so that the duration of illumination (dose modulation) for particular pixels is varied to lie between the full on and full off normally used. For instance, three levels of pixel intensity are provided, 100%, 70% and 30% (in addition to off which is 0%). The 30% and 70% pixels are used along the edge of a feature so as to locate the edge when written in between the lines of the cartesian raster scan grid. Thus the edges of the feature are moved off the grid, without the need for multiple passes. This pixel dose modulation uses three preset delay lines determining dwell times for each pixel on a pixel-by-pixel basis, as defined by a two (or more) bit deep memory file associated with the pattern to be written. Additionally, the pixel center locations are directly moved off the grid by deflecting the beam as it scans certain pixels located along feature edges. The amount of deflection is controllably variable to achieve various edge locations. This deflection is used by itself or in combination with dose modulation, and is implemented by an electrostatic deflector in the beam lens for an E-beam system.

公开(公告)号：EP0653103A4

公开(公告)日：1998-12-16

申请号：EP94917933

申请日：1994-05-06

Applicant: ETEC SYSTEMS INC

Inventor： ABBOUD FRANK E ,  MURAY ANDREW J ,  BERGLUND C NEIL

IPC: H01J37/305 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/302 ,  H01J37/3174 ,  H01J2237/30488

Abstract: A raster scan lithography system is modified so that the duration of illumination (dose modulation) for particular pixels is varied to lie between the full on and full off normally used. For instance, three levels of pixel intensity are provided, 100 %, 70 % and 30 % (in addition to off which is 0 %). The 30 % and 70 % pixels are used along the edge of a feature so as to locate the edge (52, 54) when written in between the lines of the cartesian raster scan grid. Thus the edges of the feature are moved off the grid, without the need for multiple passes. This pixel dose modulation uses three preset delay lines (30) determining dwell times for each pixel on a pixel-by-pixel basis, as defined by a two (or more) bit deep memory file associated with the pattern to be written. Additionally, the pixel center locations are directly moved off the grid by deflecting the beam as it scans certain pixels located along feature edges. The amount of deflection is controllably variable to achieve various edge locations. This deflection is used by itself or in combination with dose modulation, and is implemented by an electrostatic deflector in the beam lens for an E-beam system.

Abstract translation: 修改光栅扫描光刻系统，使特定像素的照明持续时间（剂量调制）变化，以处于正常使用的全开和关闭之间。 例如，提供三个等级的像素强度，100％，70％和30％（除了0％之外）。 沿着特征的边缘使用30％和70％的像素，以便在写入笛卡尔光栅扫描网格的线之间时定位边缘。 因此，特征的边缘从网格移开，而不需要多遍。 该像素剂量调制使用三个预设延迟线，以逐像素为单位确定每个像素的停留时间，如由要写入的图案相关联的两个（或更多个）位深的存储器文件定义的。 此外，像素中心位置通过在扫描沿着特征边缘定位的某些像素时偏转光束而直接从栅格移动。 偏转量可控地变化以实现各种边缘位置。 该偏转本身或与剂量调制组合使用，并且由电子束系统的束透镜中的静电偏转器实现。