公开(公告)号：CA2292645A1

公开(公告)日：1999-10-21

申请号：CA2292645

申请日：1999-04-05

Applicant: ETEC SYSTEMS INC

Inventor： KIM HOSEOB ,  CHANG TAI-HON PHILIP

IPC: G03F7/20 ,  H01J37/304 ,  H01L21/027 ,  H01L21/66

Abstract: For electron beam wafer or mask processing, a registration mark is capacitively coupled to the top surface of an overlying resist layer on a substrate to form a voltage potential on the surface of the resist layer directly over the registration mark. The registration mark is directly connected to an electrical lead that produces an AC voltage on the registration mark, which is capacitively induced on the surface of the resist layer. Alternatively, the registration mark itself is capacitively coupled to a conductive plate placed on the bottom surface of the semiconductor substrate. An AC voltage is then applied to the conductive plate that induces a charge on the registration mark, which then capacitively induces a charge on the surface of the layer of resist. An electron beam scanning across the surface of the resist layer generates secondary electrons. The secondary electrons have a low energy and are affected by the voltage potential created at the surface of the resist layer. Thus, by detecting the secondary electron signal generated by the electron beam the voltage potential on the surface of the resist layer is detected in contrast with surrounding areas. Consequently, the registration mark is detected by an electron beam, such as a low energy electron beam produced for example by an electron beam microcolumn, that does not have sufficient energy to penetrate the resist layer.

公开(公告)号：AU4821200A

公开(公告)日：2000-11-17

申请号：AU4821200

申请日：2000-05-04

Applicant: ETEC SYSTEMS INC

Inventor： MURAY LAWRENCE P ,  KIM HOSEOB ,  CHANG T H PHILIP

IPC: G01B7/30 ,  G01B7/00 ,  G01B21/30 ,  G01N23/225 ,  G01Q30/02 ,  G01Q60/00 ,  H01J37/16 ,  H01J37/28 ,  H01J37/317 ,  H01J37/30

Abstract: An apparatus for surface inspection and processing of a wafer includes a microcolumn and an associated scanning probe microscope. The microcolumn enables high speed scanning of the wafer at a relatively high resolution, while the scanning probe microscope provides atomic resolution of highly localized areas of the wafer. The microcolumn and scanning probe microscope can be partially fabricated out of the same substrate. Additionally, the microcolumn and scanning probe microscope can be a portion of an array of microcolumns and/or scanning probe microscopes. The apparatus may be used for imaging, lithography and spectroscopy.

公开(公告)号：AU4715300A

公开(公告)日：2000-11-17

申请号：AU4715300

申请日：2000-05-03

Applicant: ETEC SYSTEMS INC

Inventor： LEE KIM Y ,  KIM HOSEOB ,  MANKOS MARIAN ,  MURAY LAWRENCE ,  CHANG T H P

IPC: G03F1/16 ,  G03F7/20 ,  G03F9/00 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

Abstract: A method, an associated structure, and an apparatus for multiple charged particle beam calibration and shielded charged particle lithography. A template defining an array of membranes is positioned above a target (e.g., a semiconductor wafer of the electron beams). Each membrane defines a through slot (opening) and a set of registration marks which are located with respect to registration marks of the other membranes. Patterns are written onto the target by scanning each electron beam through its associated through slot. Intra- and inter-charged particle beam calibrations for each charged particle beam are carried out using its associated set of registration marks. The template also suppresses undesirable electrical charging of any resist present on the target during the exposure process.

公开(公告)号：AU3475999A

公开(公告)日：1999-11-01

申请号：AU3475999

申请日：1999-04-05

Applicant: ETEC SYSTEMS INC

Inventor： CHANG TAI-HON PHILIP ,  KIM HOSEOB

IPC: G03F7/20 ,  H01J37/304 ,  H01L21/027 ,  H01L21/66

Abstract: For electron beam wafer or mask processing, a registration mark is capacitively coupled to the top surface of an overlying resist layer on a substrate to form a voltage potential on the surface of the resist layer directly over the registration mark. The registration mark is directly connected to an electrical lead that produces an AC voltage on the registration mark, which is capacitively induced on the surface of the resist layer. Alternatively, the registration mark itself is capacitively coupled to a conductive plate placed on the bottom surface of the semiconductor substrate. An AC voltage is then applied to the conductive plate that induces a charge on the registration mark, which then capacitively induces a charge on the surface of the layer of resist. An electron beam scanning across the surface of the resist layer generates secondary electrons. The secondary electrons have a low energy and are affected by the voltage potential created at the surface of the resist layer. Thus, by detecting the secondary electron signal generated by the electron beam the voltage potential on the surface of the resist layer is detected in contrast with surrounding areas. Consequently, the registration mark is detected by an electron beam, such as a low energy electron beam produced for example by an electron beam microcolumn, that does not have sufficient energy to penetrate the resist layer.