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    TUNABLE VCSEL WITH STRAIN COMPENSATED SEMICONDUCTOR DBR
    1.
    发明申请
    TUNABLE VCSEL WITH STRAIN COMPENSATED SEMICONDUCTOR DBR 审中-公开

    公开(公告)号：WO2022082203A1

    公开(公告)日：2022-04-21

    申请号：PCT/US2021/071874

    申请日：2021-10-14

    Applicant: EXCELITAS TECHNOLOGIES CORP.

    Inventor： KUZNETSOV, Mark E.

    IPC: H01S5/183

    Abstract: Tunable VCSELs (TVCSELs) employing expanded material systems with expanded mechanical/optical design space for semiconductor DBR mirrors on GaAs substrates. One is the InGaAs / AlGaAsP material system. It adds indium In to decrease InGaAs H-layer bandgap for higher refractive index and higher DBR layer refractive index contrast. Adding phosphorus P gives independent control of bandgap and strain of AlGaAsP low refractive index L-layers. The tensile strain of AlGaAsP L-layer compensates compressive strain of InGaAs H-layer and lowers the cumulative strain of the multilayer DBR structure. Another option is the InGaAsN(Sb) / AlGaAsP material system, where both types of layers can be lattice matched to GaAs. It uses indium In and nitrogen N, and possibly antimony Sb, to get independent control of strain and bandgap, and thus refractive index, of dilute nitride InGaAsN(Sb) H-layers, with lower bandgap and higher refractive index than starting GaAs. Using expanded material system enables reliable DBR mirrors with higher reflectivity and spectral bandwidth and tunable VCSELs with wider tuning range.

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