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    THE APPARATUS FOR SURFACE TREATMENT OF BIO-CHEMICAL SENSOR
    2.
    发明申请
    THE APPARATUS FOR SURFACE TREATMENT OF BIO-CHEMICAL SENSOR 审中-公开
    生物化学传感器表面处理装置

    公开(公告)号：WO2009054617A1

    公开(公告)日：2009-04-30

    申请号：PCT/KR2008/005653

    申请日：2008-09-24

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE ,  YU, Han Young ,  KIM, An Soon ,  AH, Chil Seong ,  YANG, Jong Heon ,  BAEK, In Bok ,  AHN, Chang Geun ,  PARK, Chan Woo ,  KIM, Byung Hoon ,  JANG, Moon Gyu

    Inventor： YU, Han Young ,  KIM, An Soon ,  AH, Chil Seong ,  YANG, Jong Heon ,  BAEK, In Bok ,  AHN, Chang Geun ,  PARK, Chan Woo ,  KIM, Byung Hoon ,  JANG, Moon Gyu

    IPC: G01N33/48

    CPC classification number: B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00351 ,  B01J2219/00475 ,  B01J2219/00529 ,  B01J2219/00533 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00659 ,  B01J2219/00691 ,  B01L9/52

    Abstract: Provided is an apparatus for automated surface treatment of a biochemical sensor capable of surface treating a chip, which is to be used as the biochemical sensor. The apparatus for surface treatment of a biochemical sensor has at least one treatment region, the treatment region including: at least one vessel for containing one specimen selected from chemical, biochemical, and biological materials, which are to be used for surface treatment on at least one surface of a chip, which is to used as a biochemical sensor; a chip loading means for loading the chip and having a size that can be inserted into the vessel for surface treatment of the chip; and a conveyance frame for alternately inserting the chip loading means into the at least one vessel containing the specimen, and movable along X-, Y-, and Z-axes, which are perpendicular to each other, for surface treatment of the chip, wherein a first coupling part, at which the chip loading means is detachably attached, is installed at a lower end of a Z-axis frame vertically movable along the Z-axis of the conveyance frame. Therefore, the automated apparatus is used for surface treatment of the sensor, without the conventional manual operation, to enable mass production of the sensor.

    Abstract translation: 本发明提供一种能够对要用作生物化学传感器的芯片进行表面处理的生物化学传感器进行自动表面处理的装置。 用于生物化学传感器的表面处理的装置具有至少一个处理区域，所述处理区域包括：用于容纳至少一个用于至少用于表面处理的化学，生物化学和生物材料的一个样品的至少一个容器 芯片的一个表面，用作生物化学传感器; 芯片装载装置，用于装载芯片并具有可以插入到容器中以便对芯片进行表面处理的尺寸; 以及输送框架，用于将所述芯片加载装置交替地插入到容纳所述样本的所述至少一个容器中，并且可沿着彼此垂直的X，Y和Z轴移动，用于对所述芯片进行表面处理，其中 安装在可沿着输送框架的Z轴可垂直移动的Z轴框架的下端的第一联接部件，其中可拆卸地安装有芯片装载装置。 因此，无需传统的手动操作，自动化装置用于传感器的表面处理，以便能够大量生产传感器。

    SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体纳米传感器器件及其制造方法

    公开(公告)号：WO2009072722A1

    公开(公告)日：2009-06-11

    申请号：PCT/KR2008/004331

    申请日：2008-07-24

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE ,  PARK, Chan Woo ,  AHN, Chang Geun ,  YANG, Jong Heon ,  BAEK, In Bok ,  AH, Chil Seong ,  YU, Han Young ,  KIM, An Soon ,  KIM, Tae Youb ,  JANG, Moon Gyu ,  JUN, Myung Sim

    Inventor： PARK, Chan Woo ,  AHN, Chang Geun ,  YANG, Jong Heon ,  BAEK, In Bok ,  AH, Chil Seong ,  YU, Han Young ,  KIM, An Soon ,  KIM, Tae Youb ,  JANG, Moon Gyu ,  JUN, Myung Sim

    IPC: H01L29/00 ,  H01L29/78

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  H01L29/0673 ,  H01L29/78696

    Abstract: A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device. The method includes etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.

    Abstract translation: 提供一种制造生物传感器装置的方法。 该方法包括使用典型的光刻工艺形成线宽为几纳米至几十纳米的硅纳米线通道，并使用该通道制造半导体纳米线传感器装置。 该方法包括蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线阵列，掺杂第一导电型单晶硅线阵列的两个侧壁， 形成具有与第一导电类型相反的第二导电类型的杂质的单晶硅线图案，以形成第二导电型沟道，形成用于在第一导电型单晶的两端形成电极的第二导电型焊盘 硅线图案，在第一导电型单晶硅线图案的未掺杂区域中形成第一电极，用于施加反向偏置电压以使第一导电型单晶硅线图案和第二导电型 并且形成用于在第二导通型通道上施加偏置电压的第二电极 导电型垫。

    SENSING DEVICE
    4.
    发明申请
    SENSING DEVICE 审中-公开
    感应装置

    公开(公告)号：WO2010041805A1

    公开(公告)日：2010-04-15

    申请号：PCT/KR2009/002796

    申请日：2009-05-27

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE ,  AHN, Chang Geun ,  PARK, Chan Woo ,  YANG, Jong Heon ,  BAEK, In Bok ,  AH, Chil Seong ,  KIM, An Soon ,  KIM, Tae Youb ,  SUNG, Gun Yong

    Inventor： AHN, Chang Geun ,  PARK, Chan Woo ,  YANG, Jong Heon ,  BAEK, In Bok ,  AH, Chil Seong ,  KIM, An Soon ,  KIM, Tae Youb ,  SUNG, Gun Yong

    IPC: G01N27/414 ,  G01N27/26 ,  G01N27/327 ,  G01N33/483

    CPC classification number: G01N27/4145 ,  G01N27/4146

    Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive materia! layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.

    Abstract translation: 提供了一种感测装置，其包括响应于流体中的特定官能团的反应性材料层（260），包括设置在绝缘层（230）上和下方的第一和第二电极的感测电容器（B），第一电极 被处置在反应性材料之下！ 层（260）和场效应晶体管，其包括与感测电容器的第一电极连接的栅电极。 这里，反应性材料层（260）形成为导电三维结构以扩大表面积。 因此，感测装置可以通过最大化电容器共享效应和施加到栅极的电压量的变化而具有高灵敏度，这可能是由导电三维结构相对于流体流动的表面积变宽引起的。

    THREE-DIMENSIONAL NANODEVICES INCLUDING NANOSTRUCTURES
    5.
    发明申请
    THREE-DIMENSIONAL NANODEVICES INCLUDING NANOSTRUCTURES 审中-公开
    包括纳米结构的三维纳米器件

    公开(公告)号：WO2009044983A1

    公开(公告)日：2009-04-09

    申请号：PCT/KR2008/002792

    申请日：2008-05-19

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE ,  YU, Han Young ,  KIM, Byung Hoon ,  KIM, An Soon ,  BAEK, In Bok ,  AH, Chil Seong ,  YANG, Jong Heon ,  PARK, Chan Woo ,  AHN, Chang Geun

    Inventor： YU, Han Young ,  KIM, Byung Hoon ,  KIM, An Soon ,  BAEK, In Bok ,  AH, Chil Seong ,  YANG, Jong Heon ,  PARK, Chan Woo ,  AHN, Chang Geun

    IPC: B82B1/00

    CPC classification number: H01J49/4205 ,  B81B7/0025 ,  B81B2201/0214 ,  B81B2201/0271 ,  B82Y10/00 ,  B82Y40/00 ,  G01N2291/0257 ,  H01J49/0018 ,  H01L29/0673 ,  H01L29/7613 ,  H01L29/775 ,  H03H2009/02314

    Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.

    Abstract translation: 提供了三维（3D）纳米器件，包括3D纳米结构。 3D纳米装置包括至少一个纳米结构，每个纳米结构包括漂浮在基板上的振荡部分和支撑部分，用于支撑振荡部分的两个纵向端部，支撑件设置在基板上以支撑每个纳米结构的支撑部分， 设置在基板的上部，基板的下部或基板的上部和下部的至少一个控制器，以控制每个纳米结构;以及感测单元，设置在每个振荡部分上以感测 外部供应的吸附材料。 因此，与典型的平面器件不同，可以减少纳米器件与衬底之间的杂质的产生，并且可能引起机械振动。 特别地，由于3D纳米结构具有机械和电学特性，可以使用纳米机电系统（NEMS）提供包括新的3D纳米结构的3D纳米器件。 此外，可以使用与平面器件不同的简单工艺来形成单电子器件，自旋器件或单电子晶体管（SET）场效应晶体管（FET）混合器件。

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