公开(公告)号：US10825947B2

公开(公告)日：2020-11-03

申请号：US16312771

申请日：2018-01-10

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Adam Rämer ,  Sergey Shevchenko

IPC: H01L31/113 ,  H01L31/112 ,  G01J5/00 ,  G01J5/02 ,  H01L29/778 ,  H01Q13/10 ,  H01Q23/00

Abstract: A radiation detector comprises an antenna structure; and a field effect transistor structure having a source region, a gate region, and a drain region, arranged on a substrate and forming mutually independent electrically conductive electrode structures through metallization, wherein the gate electrode structure completely encloses the source electrode structure or the drain electrode structure in a first plane; the enclosed electrode structure extends up to above the gate electrode structure and there overlaps the enclosure in a second plane above the first plane at least in sections in a planar manner; wherein an electrically insulating region for forming a capacitor with a metal-insulator-metal structure is arranged between the regions of the gate electrode structure overlapped by the enclosed electrode structure.