公开(公告)号：US09008145B2

公开(公告)日：2015-04-14

申请号：US13859832

申请日：2013-04-10

Applicant: Forschungsverbund Berlin e.V.

Inventor： Markus Weyers ,  Götz Erbert

IPC: H01S3/093 ,  H01L33/06 ,  H01S5/04 ,  H01S5/028 ,  H01S5/12 ,  H01S3/094

CPC classification number: H01L33/06 ,  H01S3/094092 ,  H01S5/0287 ,  H01S5/041 ,  H01S5/1203

Abstract: An edge-emitting semiconductor component, comprising a semiconductor substrate layer and epitaxially on-grown semiconductor layers, is disclosed. According to the invention an active zone of the semiconductor layers is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and generate an optical radiation of a second wavelength that is shorter than the first wavelength. A step of multiplying the first wavelength of the pumped optical radiation to a second harmonic using a nonlinear crystal is advantageously made redundant. Furthermore, a system for frequency conversion is disclosed, comprising the semiconductor component, a pump laser diode designed to generate the pumped optical radiation and methods for manufacturing the semiconductor component and operating the system for frequency conversion.

Abstract translation: 公开了一种包括半导体衬底层和外延生长半导体层的边缘发射半导体部件。 根据本发明，半导体层的有源区被设计成通过多光子吸收吸收第一波长的泵浦光辐射，并产生比第一波长短的第二波长的光辐射。 有利地，使用非线性晶体将泵浦的光辐射的第一波长与二次谐波相乘的步骤是多余的。 此外，公开了一种用于频率转换的系统，包括半导体部件，被设计成产生泵浦光学辐射的泵激光二极管和用于制造半导体部件并操作用于频率转换的系统的方法。

公开(公告)号：US10833478B2

公开(公告)日：2020-11-10

申请号：US16327419

申请日：2017-08-21

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Götz Erbert ,  Jörg Fricke ,  Andre Müller ,  Hans Wenzel ,  Bernd Sumpf ,  Katrin Paschke

IPC: H01S5/10 ,  G02B6/122 ,  G02B6/124 ,  H01S5/125

Abstract: The inventive waveguide structure comprises a first waveguide region having a constant first width adapted to guide electromagnetic waves mode sustainably along its longitudinal axis; a second waveguide region adapted to guide electromagnetic waves mode sustainably along its longitudinal axis, wherein the longitudinal axis of the first waveguide region and the longitudinal axis of the second waveguide region form a common longitudinal axis of the waveguide structure, wherein a first end face of the first waveguide region and a first end face of the second waveguide region are aligned with each other, the width of the first end face of the second waveguide region corresponding to the first width, and the width of the second waveguide region along its longitudinal axis widens from the first end face to a second end face to a second width greater than the first width.

公开(公告)号：US10348056B2

公开(公告)日：2019-07-09

申请号：US15736631

申请日：2016-03-09

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Jörg Fricke ,  Götz Erbert ,  Paul Crump ,  Jonathan Decker

IPC: H01S5/12 ,  H01S5/20 ,  H01S5/026

Abstract: Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for outcoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grating operatively connected to the waveguiding region, wherein the grating comprises a plurality of bridges and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grating is non-zero, wherein the coupling parameter P of a trench is defined by the equation, wherein dres is a distance of the trench to the active layer, w is a width of the trench and Δn is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.