公开(公告)号：US20200066919A1

公开(公告)日：2020-02-27

申请号：US16462650

申请日：2017-11-20

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Konstantin OSIPOV ,  Richard LOSSY ,  Hans-Joachim WÜRFL

IPC: H01L29/812 ,  H01L29/66

Abstract: This invention concerns a gate structure and a process for manufacturing.In particular, the present invention concerns the gate structuring of a field effect transistor with reduced thereto-mechanical stress and increased reliability (lower electromigration or diffusion of the gate metal).The gate structure according to the invention comprises a substrate (10); an active layer (20) disposed on the substrate (10); an intermediate layer (40) disposed on the active layer (20), the intermediate layer (40) having a recess (45) extending through the entire intermediate layer (40) towards the active layer (20); and a contact element (50) which is arranged within the recess (45), the contact element (50) completely filling the recess (45) and extending to above the intermediate layer (40), the contact element (50) resting at least in sections directly on the intermediate layer (40); the contact element (50) being made of a Schottky metal (52) and the contact element (50) having an interior cavity (55) completely enclosed by the Schottky metal (52).

公开(公告)号：US20210013392A1

公开(公告)日：2021-01-14

申请号：US16764802

申请日：2018-10-17

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Konstantin OSIPOV ,  Hans-Joachim WUERFL

IPC: H01L41/047 ,  H01L41/18 ,  H01L41/293 ,  H01L27/20

Abstract: The present invention relates to a gate structure and a method for its production.
In particular, the present invention relates to a gate structuring of a field effect transistor (FET), wherein the field effect transistor with the same active layer can be constructed as a depletion type, or D-type, as an enhancement type, or E-type, and as a low noise type, or LN-type, on a shared substrate base using a uniform method.
The gate structure according to the invention comprises a substrate; a piezoelectric active layer (112, 212) disposed on the substrate (110, 210); a passivation layer (120, 220) disposed on the active layer (112, 212), wherein the passivation layer (120, 220) has a recess (122, 222) that extends through the entire passivation layer (120, 220) in the direction of the active layer (112, 212); a contact element (140, 240) disposed within the recess (122, 222), wherein the contact element (140, 240) extends from the active layer (112, 212) to above the passivation layer (120, 220); and a cover layer (150, 250) that covers the contact element (140, 240) above the passivation layer (120, 220); wherein at least one layer disposed above the active layer is tensile stressed or compressively stressed in the area around the contact element, with a normal tension of |σ|>200 MPa, wherein via the individual stresses in the area around the contact element, a resulting force on the boundary area between the passivation layer and the active layer is set, which influences via the piezoelectric effect the electron density in the active layer in the area below the contact element.