公开(公告)号：US20130270578A1

公开(公告)日：2013-10-17

申请号：US13864353

申请日：2013-04-17

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Tomas KRÄMER

IPC: H01L23/373 ,  H01L21/48

CPC classification number: H01L23/3738 ,  H01L21/4871 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to the invention, a semiconductor device composite structure is provided which comprises an initial substrate with discreet, integrated devices and a heat removal structure. The heat removal structure comprises: a bond layer which is attached to the initial substrate or the devices, a heat removal structure which is attached on the bond layer and which consists of a material with a specific thermal conductivity which is at least double the level of the average specific heat conductivity of the initial substrate or the devices, and one or more metallic thermal bridges which thermally connect the devices with the heat removal structure via the bond layer. The thermal bridges are designed as vertical through connections (vias) through the bond and heat removal structure. The invention furthermore relates to an associated production method.

Abstract translation: 根据本发明，提供一种半导体器件复合结构，其包括具有谨慎的集成器件的初始衬底和散热结构。 除热结构包括：附接到初始衬底或器件的接合层，附着在接合层上的散热结构，其由比导热系数的至少两倍的材料组成 初始衬底或器件的平均比热导率以及通过接合层将器件与散热结构热连接的一个或多个金属热桥。 热桥通过焊接和散热结构设计为垂直通孔连接（通孔）。 本发明还涉及相关的生产方法。