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1.发明申请
公开(公告)号：WO2019166836A1
公开(公告)日：2019-09-06
申请号：PCT/GR2018/000010
申请日：2018-02-28
Inventor： STRATAKIS, Emmanouil , SKOULAS, Evangelos , PAPADOPOULOS, Antonios
Abstract: Method and devices using lasers to reduce reflection of transparent solids in the optical spectrum, coatings and devices employing transparent solids are disclosed. The lasers are used to shape surfaces of the transparent solid materials by raising the temperature of the material to around the melting temperature, and thereby generate desired target nanostructure two-dimensional antireflection pattern arrays on the surfaces. The laser fluence value, wavelength, repetition rate, pulse duraction and number of consecutive laser pulses per focus spot are selected, and a desired focus spot distribution on the surface of the transparent solid material is identified. The transparent solid material is relatively translated to generate the desired nanostructure two-dimensional pattern array.
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2.发明申请ABLATING SIC WAFER CONFIGURATIONS AND MANUFACTURING LIGHT EMITTING DIODE (LED) DEVICES 审中-公开抛光SIC波形配置和制造发光二极管（LED）器件
公开(公告)号：WO2016016670A1
公开(公告)日：2016-02-04
申请号：PCT/GR2015/000040
申请日：2015-07-31
Applicant: FOUNDATION FOR RESEARCH AND TECHNOLOGY HELLAS INSTITUTE OF ELECTRONIC STRUCTURE AND LASERS , ENERGOMASHTECHNIKA (EMT LTD)
Inventor： STRATAKIS, Emmanouil , FOTAKIS, Costas , SHAFEEV, Georgy , BARMINA, Ekaterina
IPC: H01L33/20
CPC classification number: H01L33/20 , H01L33/0095 , H01L33/22 , H01L2933/0091
Abstract: The invention proposes a manufacturing method for enhancement of the luminosity of SiC-based LED devices using double exposure of the light-emitting surface of a LED device or LED component or SiC wafer to linearly polarized radiation of a femtosecond laser beam of a proper fluence. The first exposure results in the formation of a pattern of parallel periodic grooves onto SiC surface. Then the LED device, or LED component, or SiC wafer is rotated by 90 degrees and subsequently irradiated for a second time. The double exposure results in the formation of an array of regular depressions and nanogrooves onto SiC surface. These depressions act as an anti- reflecting coating due to smooth variation of the refractive index from its value in the crystal to air and lead to the increase of internal quantum efficiency of LED. The manufacturing method can be performed during the LED device fabrication or as a pre- or post- fabrication step. The manufacturing process can be performed in air or after immersion of a LED device, or LED component, or SiC wafer in liquid.
Abstract translation: 本发明提出了一种通过将LED器件或者LED元件或者SiC晶片的发光面双重曝光到适当注量的飞秒激光的线偏振辐射来提高SiC基LED元件的发光度的制造方法。 第一次曝光导致在SiC表面上形成平行周期性凹槽的图案。 然后将LED器件或LED部件或SiC晶片旋转90度，随后再次照射。 双重曝光导致在SiC表面上形成规则凹陷和纳米纹阵列。 由于折射率从晶体的数值到空气的平滑变化，导致LED的内部量子效率的增加，这些凹陷作为抗反射涂层。 该制造方法可以在LED器件制造期间或者在制造前或制造后步骤中进行。 制造过程可以在空气中或将LED器件或LED部件或SiC晶片浸入液体中之后进行。
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3.发明公开
公开(公告)号：EP3759529A1
公开(公告)日：2021-01-06
申请号：EP18716330.8
申请日：2018-02-28
Inventor： STRATAKIS, Emmanouil , SKOULAS, Evangelos , PAPADOPOULOS, Antonios
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