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公开(公告)号:DE69020819T2
公开(公告)日:1996-01-11
申请号:DE69020819
申请日:1990-08-09
Applicant: FRANCE TELECOM
Inventor: HAOND MICHEL , GALVIER JEAN
IPC: H01L21/3213 , H01L21/336 , H01L21/84 , H01L29/772
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公开(公告)号:DE69020819D1
公开(公告)日:1995-08-17
申请号:DE69020819
申请日:1990-08-09
Applicant: FRANCE TELECOM
Inventor: HAOND MICHEL , GALVIER JEAN
IPC: H01L21/3213 , H01L21/336 , H01L21/84 , H01L29/772
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公开(公告)号:DE69008156T2
公开(公告)日:1994-12-01
申请号:DE69008156
申请日:1990-12-18
Applicant: FRANCE TELECOM
Inventor: TISSIER ANNIE , GALVIER JEAN
Abstract: The present invention concerns a procedure for measuring the dimensions of a spacer consisting in: - forming, on a substrate (1), an array of parallel strips (2) having a rectangular cross-section; - producing spacers (7) on the lateral edges (6) of the parallel strips (2); - illuminating the array with a light beam in order to produce a diffraction pattern whose envelope has a primary lobe and secondary lobes; - measuring the sum of the light intensities of a predetermined number of spots belonging to the first secondary lobe; and - and deriving from this the width l and the angle THETA of the spacer (7) by the following formulae: l = k1 x IL1 + k2 THETA = k3 x IL1 + k4
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公开(公告)号:DE69114595T2
公开(公告)日:1996-05-02
申请号:DE69114595
申请日:1991-07-16
Applicant: FRANCE TELECOM
Inventor: GALVIER JEAN , GAYET PHILIPPE , TISSIER ANNIE
IPC: H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/3213 , H01L21/66 , H01L21/768 , G01B11/06 , H01L21/321
Abstract: The present invention relates to a process for determining the complete removal of a thin layer (3) deposited on a substrate (1). This process comprises the steps consisting in providing on a zone of the substrate (1) an optical diffraction grating (2, 2'), the thin layer deposited on the substrate also overlapping this diffraction grating, and the etching of the thin layer also being done in the region of this diffraction grating; in illuminating the grating (2, 2') with a monochromatic light beam; and in observing the change in the diffracted light during the operation of etching the thin layer, so as to determine the instant at which the material of the thin layer is wholly eliminated. … …
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公开(公告)号:AT104428T
公开(公告)日:1994-04-15
申请号:AT90420552
申请日:1990-12-18
Applicant: FRANCE TELECOM
Inventor: TISSIER ANNIE , GALVIER JEAN
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公开(公告)号:DE69114595D1
公开(公告)日:1995-12-21
申请号:DE69114595
申请日:1991-07-16
Applicant: FRANCE TELECOM
Inventor: GALVIER JEAN , GAYET PHILIPPE , TISSIER ANNIE
IPC: H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/3213 , H01L21/66 , H01L21/768 , G01B11/06 , H01L21/321
Abstract: The present invention relates to a process for determining the complete removal of a thin layer (3) deposited on a substrate (1). This process comprises the steps consisting in providing on a zone of the substrate (1) an optical diffraction grating (2, 2'), the thin layer deposited on the substrate also overlapping this diffraction grating, and the etching of the thin layer also being done in the region of this diffraction grating; in illuminating the grating (2, 2') with a monochromatic light beam; and in observing the change in the diffracted light during the operation of etching the thin layer, so as to determine the instant at which the material of the thin layer is wholly eliminated. … …
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公开(公告)号:DE69008156D1
公开(公告)日:1994-05-19
申请号:DE69008156
申请日:1990-12-18
Applicant: FRANCE TELECOM
Inventor: TISSIER ANNIE , GALVIER JEAN
Abstract: The present invention concerns a procedure for measuring the dimensions of a spacer consisting in: - forming, on a substrate (1), an array of parallel strips (2) having a rectangular cross-section; - producing spacers (7) on the lateral edges (6) of the parallel strips (2); - illuminating the array with a light beam in order to produce a diffraction pattern whose envelope has a primary lobe and secondary lobes; - measuring the sum of the light intensities of a predetermined number of spots belonging to the first secondary lobe; and - and deriving from this the width l and the angle THETA of the spacer (7) by the following formulae: l = k1 x IL1 + k2 THETA = k3 x IL1 + k4
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