Abstract:
The present invention provides an organic semiconductor composition which makes it possible to prepare an organic thin film transistor having excellent insulation reliability while inhibiting the deterioration of mobility, and to provide an organic thin film transistor prepared using the composition. Furthermore, the present invention provides electronic paper and a display device which contain the organic thin film transistor. The organic semiconductor composition according to the present invention contains an organic semiconductor material and at least one kind of migration inhibitor selected from a compound represented by the following Formula (I), a compound represented by the following Formula (II), and a compound represented by the following Formula (III).
Abstract:
The present invention provides an organic semiconductor composition, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, and an organic thin film transistor, electronic paper, and a display device which are prepared by using the organic semiconductor composition. The organic semiconductor composition of the present invention contains an organic semiconductor material and an anti-migration agent containing at least either a compound X, which contains at least two or more groups selected from the group consisting of a group represented by Formula (A) and a group represented by Formula (B), or a compound Y which is represented by Formula (C).
Abstract:
Objects of the present invention are to provide a conductive film forming composition which makes it possible to obtain an organic thin film transistor exhibiting excellent insulation reliability and high mobility and to provide a conductive film, an organic thin film transistor, electronic paper, a display device, and a wiring board which use the conductive film forming composition. The conductive film forming composition of the present invention contains metal particles A and a compound B represented by the following Formula (I). €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒcC n+ aA m- €ƒ€ƒ€ƒ€ƒ€ƒFormula (I)