Abstract:
The invention provides a graft pattern forming method including contacting a radical-polymerizable unsaturated compound with a surface of a base material capable of generating radicals by exposure; and exposing imagewise with laser light having a wavelength of 360 to 700 nm to form a graft polymer directly bonded to the base material patternwise on the surface of the base material. The invention also provides a conductive pattern forming method including imparting conductivity to the graft pattern formed patternwise obtained by the graft pattern forming method.
Abstract:
An object of the present invention is to provide a composition for forming an organic semiconductor film that is excellent in printing properties and makes is possible to prepare an organic thin film transistor excellent in mobility and insulation reliability. Another object of the present invention is to provide an organic thin film transistor, electronic paper, and a display device. The composition for forming an organic semiconductor film of the present invention contains an organic semiconductor material, a phenolic reductant, a polymer compound having a weight-average molecular weight of equal to or greater than 500,000, a surfactant, and an organic solvent having a standard boiling point of equal to or higher than 150°C, in which a ratio of a content of the organic semiconductor material to a content of the polymer compound is 0.02 to 10 based on mass, and a ratio of a content of the phenolic reductant to the content of the polymer compound is 0.1 to 5 based on mass.
Abstract:
The present invention provides an organic semiconductor composition which makes it possible to prepare an organic thin film transistor having excellent insulation reliability while inhibiting the deterioration of mobility, and to provide an organic thin film transistor prepared using the composition. Furthermore, the present invention provides electronic paper and a display device which contain the organic thin film transistor. The organic semiconductor composition according to the present invention contains an organic semiconductor material and at least one kind of migration inhibitor selected from a compound represented by the following Formula (I), a compound represented by the following Formula (II), and a compound represented by the following Formula (III).
Abstract:
The present invention provides an organic semiconductor composition, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, and an organic thin film transistor, electronic paper, and a display device which are prepared by using the organic semiconductor composition. The organic semiconductor composition of the present invention contains an organic semiconductor material and an anti-migration agent containing at least either a compound X, which contains at least two or more groups selected from the group consisting of a group represented by Formula (A) and a group represented by Formula (B), or a compound Y which is represented by Formula (C).
Abstract:
Objects of the present invention are to provide a conductive film forming composition which makes it possible to obtain an organic thin film transistor exhibiting excellent insulation reliability and high mobility and to provide a conductive film, an organic thin film transistor, electronic paper, a display device, and a wiring board which use the conductive film forming composition. The conductive film forming composition of the present invention contains metal particles A and a compound B represented by the following Formula (I). €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒcC n+ aA m- €ƒ€ƒ€ƒ€ƒ€ƒFormula (I)
Abstract:
The present invention provides an organic semiconductor composition, which improves the insulation reliability of an organic thin-film transistor without greatly reducing the mobility of the organic thin-film transistor, an organic thin-film transistor which is formed by using the organic semiconductor composition, and electronic paper and a display device which use the organic thin-film transistor. The organic semiconductor composition of the present invention contains an organic semiconductor material and an F-containing migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).
Abstract:
An object of the present invention is to provide an organic semiconductor composition, which improves the insulation reliability of an organic thin-film transistor without greatly reducing the mobility of the organic thin-film transistor, an organic thin-film transistor which is prepared by using the organic semiconductor composition, and electronic paper and a display device which use the organic thin-film transistor. The organic semiconductor composition of the present invention contains an organic semiconductor material (A) and a polymer compound (B) containing a repeating unit represented by the following Formula (B).
Abstract:
The present invention provides a composition for forming a gate insulating film, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, an organic thin film transistor, electronic paper, and a display device. The composition for forming a gate insulating film of the present invention contains an insulating material and a migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).