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    MICRO SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明公开
    MICRO SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    微型开关装置及其制造方法

    公开(公告)号：KR20070078996A

    公开(公告)日：2007-08-03

    申请号：KR20070008950

    申请日：2007-01-29

    Applicant: FUJITSU LTD

    Inventor： NGUYEN TUAN ANH ,  NAKATANI TADASHI ,  UEDA SATOSHI

    IPC: B81C3/00 ,  B81B3/00

    CPC classification number: H01H59/0009

    Abstract: A micro switching device is provided to offer the micro switching device and a method of manufacture thereof suitable for reducing insertion losses and driving voltage by including a movable contact electrode film, a pair of fixed contact electrodes, a movable driving electrode film and a fixed driving electrode. A micro switching device comprises a base(S1), a fixed portion(11), a movable portion(12), a movable contact electrode film, a pair of fixed contact electrodes(13,14), a movable driving electrode film and a fixed driving electrode(15,16). The fixed portion is joined to the base. The movable portion extends along the base and has a fixed end fixed to the fixed portion. The movable contact electrode film is provided on a side of the movable portion opposite the base. A pair of fixed contact electrodes is each joined to the fixed portion and each has a region opposing the movable contact electrode film. The movable driving electrode film is provided on a side of the movable portion opposite the base, the movable driving electrode film being thinner than the movable contact electrode film. The fixed driving electrode has a region opposing the movable driving electrode film, the fixed driving electrode being joined to the fixed portion.

    Abstract translation: 提供一种微型开关装置，其提供微型开关装置及其制造方法，其适于通过包括可动接触电极膜，一对固定接触电极，可移动驱动电极膜和固定驱动来减小插入损耗和驱动电压 电极。 微型开关装置包括基座（S1），固定部分（11），可动部分（12），可动接触电极膜，一对固定接触电极（13,14），可动驱动电极膜和 固定驱动电极（15,16）。 固定部分连接到基座。 可移动部分沿着基部延伸并且具有固定到固定部分的固定端。 可动接触电极膜设置在与基座相对的可动部分的一侧。 一对固定接触电极各自连接到固定部分，并且每个具有与可动接触电极膜相对的区域。 可移动驱动电极膜设置在与基座相对的可动部分的一侧，可动驱动电极膜比可动接触电极膜薄。 固定驱动电极具有与可动驱动电极膜相对的区域，固定驱动电极与固定部分接合。

    METHOD FOR MANUFACTURING MICROSTRUCTURE AND MICROSTRUCTURE
    2.
    发明公开
    METHOD FOR MANUFACTURING MICROSTRUCTURE AND MICROSTRUCTURE 审中-公开
    制造微结构和微结构的方法

    公开(公告)号：KR20070077786A

    公开(公告)日：2007-07-27

    申请号：KR20070007136

    申请日：2007-01-23

    Applicant: FUJITSU LTD ,  FUJITSU MEDIA DEVICES LTD

    Inventor： NAKATANI TADASHI ,  NGUYEN TUAN ANH ,  UEDA SATOSHI ,  YONEZAWA YU ,  MISHIMA NAOYUKI

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/00944

    Abstract: A microstructure and a method for manufacturing the same are provided to execute an anisotropic etching with an etching quantity controlling film and a first layer by using a mask pattern to mask a part of the first layer processed into a first structure unit and a second structure. A method of manufacturing a microstructure includes the steps of: (a) preparing an SOI(Silicon On Insulator) substrate having a laminating structure composed of a first layer(21), a second layer(22), and a middle layer between the first layer and the second layer; (b) forming a conductor layer(24) made of a material having resistance of an RIE(Reactivity Ion Etching) in a cutting process on the first layer; and (c) etching the conductor layer by using a resist pattern as a mask after forming the predetermined resist pattern on the conductor layer with a photolithography method.

    Abstract translation: 提供了一种微结构及其制造方法，其通过使用掩模图案，对被处理为第一结构单元和第二结构的第一层的一部分进行掩模蚀刻，利用蚀刻量控制膜和第一层进行各向异性蚀刻。 制造微结构的方法包括以下步骤：（a）制备具有由第一层（21），第二层（22）和第一层（21）之间的中间层构成的层压结构的SOI（绝缘体上硅） 层和第二层; （b）在第一层的切割过程中形成由具有RIE（反应性离子蚀刻）电阻的材料制成的导体层（24）; 以及（c）用光刻法在导体层上形成预定的抗蚀剂图案之后，通过使用抗蚀剂图案作为掩模蚀刻导体层。

    4.
    发明专利
    未知

    公开(公告)号：DE102005019886A1

    公开(公告)日：2006-08-10

    申请号：DE102005019886

    申请日：2005-04-28

    Applicant: FUJITSU LTD

    Inventor： SHIMANOUCHI TAKEAKI ,  NAKATANI TADASHI ,  IMAI MASAHIKO ,  NGUYEN ANH TUAN ,  UEDA SATOSHI

    IPC: H01G5/16

    Abstract: The first movable electrode is flat, but the second movable electrode is deformed into a convex shape. A dielectric layer is placed on the facing surface of the second movable electrode. By adjusting a voltage to be applied between the first movable electrode and the second movable electrode, an arbitrary distance is secured between the two electrodes by the electrostatic attractive force generated between the two electrodes, and a desired electrostatic capacitance is obtained. When the distance between the two electrodes is shortened, first, at the center, a part of the first movable electrode and a part of the second movable electrode come into contact with each other with the dielectric layer between them. Then, the first movable electrode and the dielectric layer (second movable electrode) come into contact with each other successively from the contact part towards the periphery side, and the contact area gradually increases.

    5.
    发明专利
    未知

    公开(公告)号：DE3783144T2

    公开(公告)日：1993-04-22

    申请号：DE3783144

    申请日：1987-02-06

    Applicant: FUJITSU LTD

    Inventor： MAEKAWA TOHRU ,  UEDA SATOSHI ,  TAKIGAWA HIROSHI ,  KOCHI TETSUYA ,  GOTO JUNJIRO

    IPC: G01J1/02 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/02

    Abstract: An infrared detector comprises a cold shield (20) consisting of: a light shielding portion (16) consisting of a substrate (10) made of an infrared transmitting material, an infrared absorbing layer (11) formed on one surface of the substrate (10), a dielectric layer (12), formed on the infrared absorbing layer (11), and an infrared reflecting layer (13) formed on the dielectric layer (12), and opening portions consisting of the substrate (10) and the dielectric layer (12), the infrared array (21) having detecting areas (22) arranged just below the opening portions of the cold shield (20).

    6.
    发明专利
    未知

    公开(公告)号：DE102005019886B4

    公开(公告)日：2007-08-23

    申请号：DE102005019886

    申请日：2005-04-28

    Applicant: FUJITSU LTD

    Inventor： SHIMANOUCHI TAKEAKI ,  NAKATANI TADASHI ,  IMAI MASAHIKO ,  NGUYEN ANH TUAN ,  UEDA SATOSHI

    IPC: H01G5/011 ,  H01G5/16

    Abstract: The first movable electrode is flat, but the second movable electrode is deformed into a convex shape. A dielectric layer is placed on the facing surface of the second movable electrode. By adjusting a voltage to be applied between the first movable electrode and the second movable electrode, an arbitrary distance is secured between the two electrodes by the electrostatic attractive force generated between the two electrodes, and a desired electrostatic capacitance is obtained. When the distance between the two electrodes is shortened, first, at the center, a part of the first movable electrode and a part of the second movable electrode come into contact with each other with the dielectric layer between them. Then, the first movable electrode and the dielectric layer (second movable electrode) come into contact with each other successively from the contact part towards the periphery side, and the contact area gradually increases.

    MICRO MOVING ELEMENT COMPRISING TORSION BAR
    7.
    发明专利
    MICRO MOVING ELEMENT COMPRISING TORSION BAR 未知

    公开(公告)号：AU2002335243A1

    公开(公告)日：2004-05-04

    申请号：AU2002335243

    申请日：2002-10-10

    Applicant: FUJITSU LTD

    Inventor： SAWAKI IPPEI ,  YAMAGISHI FUMIO ,  SONEDA HIROMITSU ,  KOUMA NORINAO ,  TSUBOI OSAMU ,  MIZUNO YOSHIHIRO ,  UEDA SATOSHI

    IPC: G02B26/08 ,  H02N1/00

    Abstract: The micro-actuation element (X1) includes a movable unit (111), a frame (112) and a coupler (113) for connecting these, where the unit, the frame and the coupler are integrally formed in a material substrate having a multi-layer structure that consists of electroconductive layers (110a-110c), such as a core conduction layer (110b), and insulation layers (110d, 110e) intervening between the electroconductive layers (110a-110c). The movable unit (111) includes a first structure originating in the core conduction layer (110b). The frame (112) includes a second structure originating in the core conduction layer (110b). The coupler (113) includes a plurality of electrically separated torsion bars (113a, 113b) that originate in the core conduction layer (110b) and are connected continuously to the first structure and the second structure.

    MICRO ROCKING DEVICE HAVING TOSION BAR
    8.
    发明专利
    MICRO ROCKING DEVICE HAVING TOSION BAR 未知

    公开(公告)号：AU2002327098A1

    公开(公告)日：2004-03-03

    申请号：AU2002327098

    申请日：2002-08-14

    Applicant: FUJITSU LTD

    Inventor： MI XIAOYU ,  TSUBOI OSAMU ,  UEDA SATOSHI ,  SAWAKI IPPEI

    IPC: B81B3/00 ,  B81B5/00 ,  G02B26/08 ,  G02B26/10

    Abstract: A micro-oscillating element is provided with a frame (113) and a oscillating member (111) connected with the frame (113) via a connector (112). Each connector (112) includes two torsion bars (112a), each torsion bar (112a) being constructed so that the rigidity becomes relatively high toward the frame (113) and relatively low toward the oscillating member (111) by forming a plurality of holes (112b).

    9.
    发明专利
    未知

    公开(公告)号：DE3783144D1

    公开(公告)日：1993-02-04

    申请号：DE3783144

    申请日：1987-02-06

    Applicant: FUJITSU LTD

    Inventor： MAEKAWA TOHRU ,  UEDA SATOSHI ,  TAKIGAWA HIROSHI ,  KOCHI TETSUYA ,  GOTO JUNJIRO

    IPC: G01J1/02 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/02

    Abstract: An infrared detector comprises a cold shield (20) consisting of: a light shielding portion (16) consisting of a substrate (10) made of an infrared transmitting material, an infrared absorbing layer (11) formed on one surface of the substrate (10), a dielectric layer (12), formed on the infrared absorbing layer (11), and an infrared reflecting layer (13) formed on the dielectric layer (12), and opening portions consisting of the substrate (10) and the dielectric layer (12), the infrared array (21) having detecting areas (22) arranged just below the opening portions of the cold shield (20).

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