Abstract:
A device for quickly removing a layer of photoresist material is described in which an oxidising agent such as ozone is used. A narrow gap of 2 mm or less is produced adjoining the photoresist layer and ozone is fed in in a flow quantity which results in a high flow rate in the gap, whilst the substrate on which the photoresist layer is located is heated to a temperature above 300 DEG C. Additionally, the photoresist can be exposed to ultraviolet light with an exposure strength of approximately 800 mW/cm . The narrow gap can be produced using a quartz plate.
Abstract:
Material that has previously been subjected to a removal treatment is removed from a substrate by being contacted with a gas containing an excited halogen at a pressure of greater than 50 torr.