公开(公告)号：EP0710161A4

公开(公告)日：1997-04-16

申请号：EP94922123

申请日：1994-07-12

Applicant: FUSION SYSTEMS CORP

Inventor： SPARKS EILEEN R ,  MITCHENER JAMES C ,  ROUNDS STUART N ,  MATTHEWS JOHN C

IPC: G03F7/36 ,  B08B3/02 ,  B08B5/00 ,  B08B6/00 ,  C03C17/32 ,  C03C23/00 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  C23G5/00 ,  G03F7/42 ,  H01L21/302 ,  H01L21/306 ,  H01L21/311 ,  H05K3/26 ,  B08B3/12 ,  B08B7/00 ,  B08B7/02 ,  B08B7/04 ,  C23G1/00 ,  G03C5/00

CPC classification number: H01L21/02046 ,  C03C17/32 ,  C03C23/00 ,  C03C2218/328 ,  G03F7/42 ,  H01L21/31138

Abstract: Material that has previously been subjected to a removal treatment is removed from a substrate by being contacted with a gas containing an excited halogen at a pressure of greater than 50 torr.

公开(公告)号：DE4238834A1

公开(公告)日：1993-05-19

申请号：DE4238834

申请日：1992-11-17

Applicant: FUSION SYSTEMS CORP

Inventor： KOEHLER PAUL K ,  WOOTEN ROBERT D ,  MATTHEWS JOHN C ,  WALKER DELROY O ,  SWERNOFSKY DAVID E

IPC: B25J15/08 ,  B65G49/07 ,  G01B11/00 ,  H01L21/00 ,  H01L21/67 ,  H01L21/677

Abstract: A light-emitting device (28) on the robot arm (16) is coupled to the array (300) of individually addressable photodetectors for checking the positions of wafers (201) in respective slots of a cassette. The robot has two wafer grippers (27) for cylindrical movement. The light emitters illuminate the photodetectors through a wafer boat (200) which is moved from a loading position to one within range of the robot. USE/ADVANTAGE - In integrated circuit mfr., setting time of processing machine is optimised so that another wafer can be supplied to it as soon as previous one has been removed.

公开(公告)号：DE3624384A1

公开(公告)日：1987-01-29

申请号：DE3624384

申请日：1986-07-18

Applicant: FUSION SYSTEMS CORP

Inventor： URY MICHAEL G ,  MATTHEWS JOHN C ,  ROUNDS STUART N

IPC: H01L21/30 ,  G03F7/00 ,  G03F7/30 ,  G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  B08B7/00

Abstract: A device for quickly removing a layer of photoresist material is described in which an oxidising agent such as ozone is used. A narrow gap of 2 mm or less is produced adjoining the photoresist layer and ozone is fed in in a flow quantity which results in a high flow rate in the gap, whilst the substrate on which the photoresist layer is located is heated to a temperature above 300 DEG C. Additionally, the photoresist can be exposed to ultraviolet light with an exposure strength of approximately 800 mW/cm . The narrow gap can be produced using a quartz plate.

公开(公告)号：DE3311249A1

公开(公告)日：1983-10-06

申请号：DE3311249

申请日：1983-03-28

Applicant: FUSION SYSTEMS CORP

Inventor： MATTHEWS JOHN C ,  URY MICHAEL G ,  WOOD CHARLES H ,  GREENBLATT MARSHAL

IPC: F21S2/00 ,  G03F7/20 ,  H01J65/04 ,  H01L21/027 ,  H01L21/31

Abstract: A method and apparatus for performing deep UV photolithography which utilizes a microwave generated electrodeless light source for producing deep UV radiation. This results in faster semiconductor exposure times and less system downtime for changing failed bulbs as well as other advantages which are detailed herein.