公开(公告)号：EP2131395A1

公开(公告)日：2009-12-09

申请号：EP09170937.8

申请日：2003-08-20

Applicant: Fujitsu Microelectronics Limited

Inventor： Ariyoshi, Junichi ,  Torii, Satoshi

IPC: H01L27/105 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/283

CPC classification number: H01L27/11526 ,  H01L21/76897 ,  H01L27/105 ,  H01L27/11546 ,  H01L29/665 ,  H01L2924/0002 ,  H01L2924/00

Abstract: On a semiconductor substrate (30) having a gate electrode (32) and an LDD layer (33) formed thereon, an SiN film (34) to be a silicide block is formed. An opening (34a) communicating with the LDD layer (33) is provided for the SiN film (34). Impurities are introduced into the LDD layer (33) through the opening (34a) to form a source/drain layer (33a), and the surface thereof is silicided to form a silicide film (36a). Next, an interlayer insulation film (37) of SiO 2 is formed and then etched under a condition of an etching rate of SiO 2 higher than that of SiN to form a contact hole (37h) reaching the LDD layer (33) from the upper surface of the interlayer insulation film (37) via the opening (34a).

Abstract translation: 在其上形成有栅极（32）和LDD层（33）的半导体衬底（30）上形成作为硅化物块的SiN膜（34）。 为SiN膜（34）提供与LDD层（33）连通的开口（34a）。 通过开口（34a）将杂质引入LDD层（33），形成源/漏层（33a），其表面被硅化以形成硅化物膜（36a）。 接下来，形成SiO 2的层间绝缘膜（37），然后在SiO 2的蚀刻速率高于SiN的蚀刻速率的条件下进行蚀刻，形成从上部到达LDD层（33）的接触孔（37h） 经由开口（34a）的层间绝缘膜（37）的表面。