Gas sensor
    4.
    发明专利

    公开(公告)号:GB2455642A

    公开(公告)日:2009-06-24

    申请号:GB0822514

    申请日:2008-12-11

    Applicant: GEN ELECTRIC

    Abstract: A gas sensor (100) is disclosed. The gas sensor includes a gas sensing layer (118) including doped oxygen deficient tungsten oxide and a dopant selected from the group consisting of Re, Ni, Cr, V, W, and a combination thereof, at least one electrode (112) positioned within/adjacent to a layer of titanium (114), and a response modification layer (116). The at least one electrode (112) is in communication with the gas sensing layer (118) and the gas sensing layer (118) is capable of detecting at least one gas selected from the group consisting of NO, NO2, SOx, 02, H20 and NH3. The response modification layer comprises Ti, Ni, Cr, v, R and/or Re or a combination thereof. A method of fabricating the gas sensor is also disclosed. The gas sensor may be used in a variety of applications, one embodiment disclosed is detecting NOx in exhaust emissions from automobiles.

    Gas sensor
    5.
    发明专利

    公开(公告)号:GB2455641A

    公开(公告)日:2009-06-24

    申请号:GB0822499

    申请日:2008-12-10

    Applicant: GEN ELECTRIC

    Abstract: A gas sensor (100) includes a gas sensing layer (118) including at least one chemical compound with the general formula M a 0 b N q , wherein M is at least one chemical element selected from the group consisting of W, Ti, Ta, Sr, Mo, and combinations thereof, and a , b , q are self-consistent, said gas sensing layer (118) being capable of detecting at least one gas selected from the group consisting of NOx, SO2, O2, H2O, CO, H2, and NH3, at least one electrode (112) positioned within an adhesion (114) layer composed of a material from the group consisting of Ti, Cr, and combinations thereof, and a response modification layer (116) composed of a material from the group consisting of Mg, Ti, V, Cr, Mn, Co, Ni, Zn, Nb, Ru, Rh, Pd, Ta, W, Re, Pt, and combinations thereof. The electrode (112) is in communication with the gas sensing layer (118). A method of fabricating the gas sensor is also disclosed.

Patent Agency Ranking