Abstract:
A holding is presented. The holding device includes a male connector comprising a first male extension and a second male extension that extend out of opposite surfaces of a male central disk, an electromagnetic guiding device continuously passing through a central hole that continuously passes through the first male extension, the male central disk and the second male extension, a reflector that is in a direct physical contact with a first end of the electromagnetic guiding device that ends at a top surface of the first male extension, and a holder that covers the first male extension to hold the reflector, and maintain the physical contact between the first end of the electromagnetic guiding device and the reflector.
Abstract:
A gas sensor device (10, 32, 48, 62) including a semiconductor substrate (12, 34, 50, 64); one or more catalytic gate-electrodes (14, 44, 58, 70) deposited on a surface of the semiconductor substrate; one or more ohmic contacts (16, 18, 40, 42, 54, 56, 66, 68) deposited on the surface of the semiconductor substrate and a passivation layer (38, 60, 72) deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.
Abstract:
A gas sensor is disclosed (100) which includes a gas sensing layer (118), at least one electrode (112), an adhesion layer (114), and a response modification layer (116) adjacent to said gas sensing layer (118) and said layer of adhesion (114). A system having an exhaust system and the gas sensor (100) is also disclosed. A method of fabricating the gas sensor (100) is also disclosed. The sensor may be specific to detecting NOx.
Abstract:
A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.
Abstract:
A device is presented. The device includes an electromagnetic guiding device to provide electromagnetic radiation, a reflector that reflects a portion of the electromagnetic radiation to generate a reflected portion of the electromagnetic radiation, wherein the reflector is fully immersed in a multiphase fluid, and a processing subsystem that analyzes the multiphase fluid based upon at least a portion of the reflected portion of the electromagnetic radiation, wherein a principal optical axis of the electromagnetic guiding device substantially aligns with a principal optical axis of the reflector.
Abstract:
A holding is presented. The holding device includes a male connector comprising a first male extension and a second male extension that extend out of opposite surfaces of a male central disk, an electromagnetic guiding device continuously passing through a central hole that continuously passes through the first male extension, the male central disk and the second male extension, a reflector that is in a direct physical contact with a first end of the electromagnetic guiding device that ends at a top surface of the first male extension, and a holder that covers the first male extension to hold the reflector, and maintain the physical contact between the first end of the electromagnetic guiding device and the reflector.
Abstract:
A method of forming a silicon carbide transient voltage suppressor (TVS) assembly (218) and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die (302) in a mesa structure that includes a first layer (306) of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer (308) of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer (312) of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.
Abstract:
A method of forming a silicon carbide transient voltage suppressor (TVS) assembly (218) and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die (302) in a mesa structure that includes a first layer (306) of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer (308) of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer (312) of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.
Abstract:
A multi-gas sensor device (10) for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment comprises a semiconductor substrate (12, 14) one or more catalytic metal gate-electrodes (16) deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact (22) deposited on the surface of the substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprises providing a sensor device (10) immersed in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes (16), altering the gas as it contacts the catalytic metal gate-electrodes (16) and altering the sensitivity of the sensor. The device (10) may have a passivation layer for increasing the selectivity to different gases and a heating element.