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公开(公告)号：DE19581904B4
公开(公告)日：2008-09-25
申请号：DE19581904
申请日：1995-09-18
Applicant: GEN ELECTRIC
Inventor： MARINER JOHN T , LONGWORTH DOUGLAS A
Abstract: A flash evaporator vaporization vessel for flash evaporating metal under conditions of repeated thermal cycling having a graphite body and an outer layer of pyrolytic boron nitride having a density above 2.15 gm/cc and preferably between 2.19 gm/cc and 2.2 gm/cc.
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公开(公告)号：DE102006056615A1
公开(公告)日：2008-01-10
申请号：DE102006056615
申请日：2006-11-30
Applicant: GEN ELECTRIC
Inventor： OLECHNOWICZ BENJAMIN J , RUSINKO DAVID M , FAN WEI , SARIGIANNIS DEMETRIUS , SCHAEPKENS MARC , LONGWORTH DOUGLAS A , LOU VICTOR L , LIU XIANG , KLUG JENNIFER
IPC: H01L21/20
Abstract: The device (10) has a base substrate on which a wafer is located. An electrical electrode is embedded in a surface of the base substrate. A functional element is penetrated into the device such that a gap is formed. Filler (230) seals the gap in the device. The filler has an etching rate of less than 1000 Angstrom per minute, if the device is exposed to a working environment in a temperature range of 25-600 degree Celsius, where it concerns with the halogens, reactive ions, plasma corroding, plasma cleaning or a gas cleaning environment at a working temperature of 400 degree Celsius. An independent claim is also included for a method for manufacturing of the wafer processing device.
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公开(公告)号：DE102006055895A1
公开(公告)日：2007-08-23
申请号：DE102006055895
申请日：2006-11-27
Applicant: GEN ELECTRIC
Inventor： OTAKA AKINOBU , HIGUCHI TAKESHI , PRASAD SRIDHAR RAMAPRASAD , FAN WEI , SCHAEPKENS MARC , LONGWORTH DOUGLAS A
Abstract: An etch resistant heater for use in a wafer processing assembly with an excellent ramp rate of at least 20° C. per minute. The heater is coated with a protective overcoating layer allowing the heater to have a radiation efficiency above 70% at elevated heater temperatures of >1500° C., and an etch rate in NF 3 at 600° C. of less than 100 A/min.
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