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    ENCAPSULATED WAFER PROCESSING DEVICE AND PROCESS FOR MAKING THEREOF
    2.
    发明申请
    ENCAPSULATED WAFER PROCESSING DEVICE AND PROCESS FOR MAKING THEREOF 审中-公开
    封装的加工设备及其制造方法

    公开(公告)号：WO2006052576A3

    公开(公告)日：2006-12-28

    申请号：PCT/US2005039593

    申请日：2005-11-02

    Applicant: GEN ELECTRIC ,  SCHAEPKENS MARC ,  TOGAWA TAKAYUKI

    Inventor： SCHAEPKENS MARC ,  TOGAWA TAKAYUKI

    IPC: H01L21/00 ,  C23C14/02 ,  C23C14/06 ,  C23C16/02 ,  C23C16/30 ,  H01L21/683 ,  H02N13/00 ,  H05B3/14

    CPC classification number: H01L21/6833 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

    Abstract: A wafer processing device for use in semiconductor wafer processing applications as an electrostatic chuck comprises a graphite substrate (1) and at least one electrode pattern (3) , wherein the grooves in the electrode pattern are filled up with insulating material (2) comprising at least one of a nitride, carbide, carbonitride or oxynitride, or combination thereof , of at least one element selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and rare earth metals, a combination thereof, forming a first substantially planar surface. This first substantially planar surface is coated with at least a semiconducting layer (4) comprising at least one of a nitride, carbide, carbonitride or oxynitride or combination thereof of at least one element selected from a group consisting of B, A, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or a combination thereof, forming a second substantially planar surface, which is outwardly exposed to support said wafer.

    Abstract translation: 用于作为静电卡盘的半导体晶片处理用途的晶片处理装置包括石墨基板（1）和至少一个电极图案（3），其中电极图案中的凹槽填充有绝缘材料（2） 至少一种选自B，Al，Si，Ga，难熔硬金属，过渡金属和稀土金属的元素的氮化物，碳化物，碳氮化物或氧氮化物或其组合中的至少一种，其组合 ，形成第一基本平坦的表面。 该第一基本上平坦的表面涂覆有至少一种包含氮化物，碳化物，碳氮化物或氮氧化物中的至少一种的半导体层（4）或其组合，所述至少一种元素选自由B，A，Si，Ga ，难熔硬金属，过渡金属和稀土金属或其组合，形成第二基本平坦的表面，其向外暴露以支撑所述晶片。

    HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION APPARATUS
    6.
    发明申请
    HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION APPARATUS 审中-公开
    高温化学蒸气沉积装置

    公开(公告)号：WO2006091405A2

    公开(公告)日：2006-08-31

    申请号：PCT/US2006004906

    申请日：2006-02-13

    Applicant: GEN ELECTRIC ,  LAKSHMIPATHY MURALIDHARAN ,  SARIGIANNIS DEMETRIUS ,  HUBBARD PATRICIA ,  SCHAEPKENS MARC ,  PANT ATUL

    Inventor： LAKSHMIPATHY MURALIDHARAN ,  SARIGIANNIS DEMETRIUS ,  HUBBARD PATRICIA ,  SCHAEPKENS MARC ,  PANT ATUL

    IPC: C23C16/455

    CPC classification number: C23C16/342 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45578 ,  C23C16/4558

    Abstract: Embodiments for an apparatus and method for depositing one or more layers onto a substrate or a freestanding shape inside a reaction chamber operating at a temperature of at least 7000C and 100 torr are provided. The apparatus is provided with means for defining a volume space in the reaction chamber for pre-reacting the reactant feeds forming at least a reaction precursor in a gaseous form, separated from a deposition zone for depositing a coating layer of uniform thickness on the substrate from the reacted precursor. In one embodiment, the means for defining the two different zones comprises a distribution medium. In another embodiment, the means comprises a plurality of reactant feed jets or injectors. In another embodiment, the apparatus is provided with a feeding system having injection means spatially spaced apart for tailoring the distribution of a plurality of gas-phase species, yielding a deposit that is substantially uniform in thickness and chemical composition along the substrate surface. In one embodiment, the apparatus further comprises a sacrificial substrate that further helps achieving thickness and chemical uniformity on the substrate.

    Abstract translation: 提供了一种用于在至少700℃和100托的温度下操作的反应室内将一个或多个层沉积到基底或独立形状上的装置和方法的实施例。 该装置设置有用于限定反应室中的体积空间的装置，用于使形成至少一种气态形式的反应前体的反应物进料预反应，与沉积区分离，用于在基底上沉积均匀厚度的涂层， 反应的前体。 在一个实施例中，用于限定两个不同区域的装置包括分布介质。 在另一个实施方案中，该装置包括多个反应物进料喷嘴或喷射器。 在另一个实施方案中，该设备具有一个进料系统，该进料系统具有空间间隔开的喷射装置，用于调整多个气相物质的分布，产生沿着基底表面的厚度和化学成分基本均匀的沉积物。 在一个实施例中，该装置还包括牺牲衬底，其进一步有助于实现衬底上的厚度和化学均匀性。

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