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    COMPOSITE REFRACTORY METAL CARBIDE COATING ON A SUBSTRATE AND METHOD FOR MAKING THEREOF
    2.
    发明申请
    COMPOSITE REFRACTORY METAL CARBIDE COATING ON A SUBSTRATE AND METHOD FOR MAKING THEREOF 审中-公开
    基材上的复合耐火金属碳化物涂层及其制造方法

    公开(公告)号：WO2005003404A2

    公开(公告)日：2005-01-13

    申请号：PCT/US2004020710

    申请日：2004-06-25

    Applicant: GEN ELECTRIC ,  SANE AJIT ,  LENNARTZ JEFFREY ,  LEIST JON ,  KOTABISH DANIEL ,  MARINER JOHN ,  MACEY ANDREW ,  LONGWORTH DOUGLAS ,  HEJL TIMOTHY ,  DEVAN THOMAS

    Inventor： SANE AJIT ,  LENNARTZ JEFFREY ,  LEIST JON ,  KOTABISH DANIEL ,  MARINER JOHN ,  MACEY ANDREW ,  LONGWORTH DOUGLAS ,  HEJL TIMOTHY ,  DEVAN THOMAS

    IPC: B05D7/22 ,  B32B9/00 ,  C23C16/14 ,  C23C16/36 ,  C23C16/458 ,  C23C16/56 ,  H01L21/00

    CPC classification number: C23C16/36 ,  C23C16/4581 ,  Y10T428/24917 ,  Y10T428/30

    Abstract: A composite coating for use on semi-conductor processing components, comprising a refractory metal carbide coating with its surface modified by at least one of: a) a carbon donor source for a stabilized stoichiometry, and b) a layer of nitride, carbonitride or oxynitride of elements selected from a group B, Al, Si, refractory metals, transition metals, rare earth metals which may or may not contain electrically conducting pattern, and wherein the metal carbide is selected from the group consisting of silicon carbide, tantalum carbide, titanium carbide, tungsten carbide, silicon oxycarbide, zirconium carbide, hafnium carbide, lanthanum carbide, vanadium carbide, niobium carbide, magnesium carbide, chromium carbide, molybdenum carbide, beryllium carbide and mixtures thereof. The composite coating is characterized as having an improved corrosion resistance property and little emissivity sensitivity to wavelengths used in optical pyrometry under the normal semi-conductor processing environments.

    Abstract translation: 一种用于半导体加工部件的复合涂层，包括难熔金属碳化物涂层，其表面由以下至少一种修饰：a）用于稳定化学计量的碳供体源，以及b）氮化物，碳氮化物或氮氧化物层 选自B，Al，Si，难熔金属，过渡金属，可能含有导电图案或不含导电图案的稀土金属，其中金属碳化物选自碳化硅，碳化钽，钛 碳化钨，碳化钨，碳氧化硅，碳化锆，碳化铪，碳化镧，碳化钒，碳化铌，碳化镁，碳化铬，碳化钼，碳化铍及其混合物。 该复合涂层的特征在于具有改善的耐腐蚀性能，并且在通常的半导体加工环境下在光学高温测量中使用的波长的发射率灵敏度小。

    5.
    发明专利
    未知

    公开(公告)号：DE102005057220A1

    公开(公告)日：2007-06-06

    申请号：DE102005057220

    申请日：2005-11-29

    Applicant: GEN ELECTRIC

    Inventor： DAVID MICHAEL ,  SANE AJIT ,  ZAYAS GARY

    IPC: C23C14/24

    Abstract: A refractory container for evaporating metals, having improved useful life and corrosion resistance properties, the evaporation surface of the container having a plurality of grooves formed at the bottom surface. The grooves have either a depth of at least 1.2 mm, a width of at least 1.75 mm, or an interval spacing of at least 2.2 mm between adjacent grooves (or centers of adjacent grooves), and combinations thereof.

    Heater for regulating/controlling surface temperature of substrate e.g. mold for glass lens, comprises a thermal pyrolytic layer in base support for providing specific maximum temperature variation, and having specific thermal conductivity
    6.
    发明专利
    Heater for regulating/controlling surface temperature of substrate e.g. mold for glass lens, comprises a thermal pyrolytic layer in base support for providing specific maximum temperature variation, and having specific thermal conductivity 未知

    公开(公告)号：DE102006056812A1

    公开(公告)日：2008-03-27

    申请号：DE102006056812

    申请日：2006-12-01

    Applicant: GEN ELECTRIC

    Inventor： MARINER JOHN THOMAS ,  SANE AJIT ,  EBATA TOSHIKI ,  SCHAEPKENS MARC ,  LIU XIANG ,  FAN WEI

    IPC: H01L21/68

    Abstract: An apparatus for supporting a substrate (W) in a process chamber and regulating surface temperature of substrate comprises a base support having a surface to support substrate; a heating element (33) for heating the substrate to at least 300[deg] C; and at least one layer (600) of thermal pyrolytic graphite material embedded in base support, and having a thermal conductivity of at least 1000 W/m[deg] C in a plane parallel to substrate. The surface of the support has a maximum temperature variation of 10[deg] C between lowest point and a highest temperature point on surface of the support. An apparatus for supporting a wafer substrate (W) in a semiconductor process chamber, comprises a base substrate (10) containing bulk graphite, where the graphite base substrate has a top surface and a bottom surface facing away from the wafer supported on the apparatus; a first coating layer for coating the graphite base substrate; at least one layer (600) of thermal pyrolytic graphite (TPG) disposed on the first coating layer or disposed between the graphite base substrate and the first coating layer; a heating element (33) for heating the substrate to at least 300[deg] C and is disposed on the bottom surface of the coated graphite base substrate; an over-coating layer (300) for coating the base support; The coating layer comprises an electrically insulating material selected from one of an oxide, nitride, oxynitride of elements selected from aluminum (Al), boron (B), silicon (Si), gallium (Ga), refractory hard metals and/or transition metals. The over-coating layer comprises one of nitride, carbide, carbonitride, oxynitride of elements selected from B, Al, Si, Ga, yttrium, refractory hard metals, and/or transition metals; a zirconium phosphate having an sodium zirconium phosphate (NZP) structure of NaZr 2(PO 4) 3; a glass-ceramic composition containing at least one element selected from elements of the Group 2a, Group 3a and Group 4a; a barium oxide-alumina-boric oxide-silica (BaO-Al 2O 3-B 2O 3-SiO 2) glass; and a mixture of SiO 2 and a plasma-resistant material comprising an oxide or fluoride of yttrium (Y), scandium (Sc), lanthanum (La), cerium (Ce), gadolinium (Gd), europium (Eu), dysprosium (Dy) and yttrium-aluminum-garnet (YAG). The wafer supported by the apparatus has a maximum temperature variation of 10[deg] C between a lowest point and a highest temperature point on the wafer. The wafer substrate surface has a maximum temperature variation of 2[deg] C. The TPG layer has a thickness of 0.5-15 mm, and a thickness variation of less than 0.005 mm. The apparatus further comprises a susceptor disposed on the base support.

    7.
    发明专利
    未知

    公开(公告)号：DE112004001760T5

    公开(公告)日：2006-12-28

    申请号：DE112004001760

    申请日：2004-09-24

    Applicant: GEN ELECTRIC

    Inventor： RUSINKO JUN DAVID MICHAEL ,  SANE AJIT

    IPC: C23C14/24 ,  C04B35/58 ,  C04B35/583 ,  C04B35/5835 ,  C04B35/645

    Abstract: A refractory container for evaporating metals, having significantly improved useful life and corrosion resistance properties, said container consists essentially of a refractory boride, boron nitride, and about 0.10 to 10 wt. % of a rare earth metal compound selected from one of an oxide, a nitride, a carbide, or mixtures thereof.

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