公开(公告)号：WO2007064766A3

公开(公告)日：2008-08-21

申请号：PCT/US2006045799

申请日：2006-11-30

Applicant: GEN ELECTRIC ,  SELEZNEVA SVETLANA ,  SUNDARAM SAIRAM ,  RAHMANE MOHAMED ,  ZALYUBOVSKIY SERGIY ,  ALLEN GARY R ,  VARGA VIKTOR K

Inventor： SELEZNEVA SVETLANA ,  SUNDARAM SAIRAM ,  RAHMANE MOHAMED ,  ZALYUBOVSKIY SERGIY ,  ALLEN GARY R ,  VARGA VIKTOR K

IPC: H01J61/30 ,  H01J61/82

CPC classification number: H01J61/86 ,  H01J61/827

Abstract: A high intensity discharge lamp, the lamp including a light emitting vessel (10) having a wall made of ceramic material that defines an inner space with a first end portion (12) having a respective first opening formed therein and a second end portion having a respective second opening formed therein, two discharge electrodes (20), with a first electrode extending therethrough the first opening of the first end portion of the vessel and a second electrode extending therethrough the second opening of the second end portion of the vessel,. together forming a gap between ends of the discharge electrodes positioned within the vessel, wherein the light emitting vessel defines an inner space characterized by an inner diameter (15) ranging from and including 1 millimeters to 3 millimeters and an inner length (26) between and including 5 millimeters to 10 millimeters, wherein the wall of the vessel has a thickness (18) ranging between and including 0.3 millimeters to 0.8 millimeters, wherein each tip of the electrodes within the vessel have a shank diameter (24) ranging- between and including 0.2 millimeters to 0.55 millimeters, and wherein the gap (22) between the ends of the electrodes positioned within the vessel is smaller than 4 millimeters.

Abstract translation: 一种高强度放电灯，该灯包括具有由陶瓷材料构成的壁的发光容器（10），该陶瓷材料限定内部空间，第一端部（12）具有形成在其中的相应的第一开口，第二端部具有 形成在其中的相应的第二开口，两个放电电极（20），其中第一电极延伸穿过其中的第一端部的第一端部的第一开口和延伸穿过该容器的第二端部的第二开口的第二电极。 一起在位于容器内的放电电极的端部之间形成间隙，其中发光器件限定内部空间，其特征在于内径（15）范围从1毫米至3毫米，内部长度（26）在 包括5毫米至10毫米，其中所述容器的壁具有在0.3毫米至0.8毫米之间且包括0.3毫米至0.8毫米的厚度（18），其中所述容器内的电极的每个末端具有范围在并且包括 0.2毫米至0.55毫米，并且其中位于容器内的电极的端部之间的间隙（22）小于4毫米。

公开(公告)号：WO2015073082A3

公开(公告)日：2015-07-02

申请号：PCT/US2014051574

申请日：2014-08-19

Applicant: GEN ELECTRIC

Inventor： LIPKIN DON MARK ,  JOHNSON CURTIS ALAN ,  MESCHTER PETER JOEL ,  SUNDARAM SAIRAM ,  WAN JULIN

IPC: C04B41/89 ,  F01D5/28

CPC classification number: C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  F01D5/288 ,  F05D2250/181 ,  Y10T428/24537 ,  C04B35/565 ,  C04B35/806 ,  C04B41/5096 ,  C04B41/5059 ,  C04B41/522 ,  C04B41/0072 ,  C04B41/4556 ,  C04B41/5035 ,  C04B41/4558 ,  C04B41/5024 ,  C04B41/5037 ,  C04B41/5029

Abstract: An article includes a silicon-containing region; at least one outer layer overlying a surface of the silicon-containing region; and a constituent layer on the surface of the silicon-containing region and between and contacting the silicon-containing region and the at least one outer layer, the constituent layer being formed by constituents of the silicon-containing region and being susceptible to creep within an operating environment of the article, wherein the silicon-containing region defines a pluarality of channels and a plurality of ridges that interlock within a plurality of channels formed in the silicon-containing region to physically interlock the at least one outer layer with the silicon-containing region through the constituent layer.

Abstract translation: 一种制品包括含硅区域; 覆盖所述含硅区域的表面的至少一个外层; 以及所述含硅区域的表面上并且在与所述含硅区域和所述至少一个外层接触的构成层之间，所述构成层由所述含硅区域的成分形成，并且易于在所述含硅区域内形成蠕变 所述制品的操作环境，其中所述含硅区域限定通道的多重性，以及在形成于所述含硅区域内的多个通道内互锁的多个脊，以使所述至少一个外层与所述含硅区域物理地互锁 区域通过构成层。

公开(公告)号：CA2928352C

公开(公告)日：2020-06-16

申请号：CA2928352

申请日：2014-08-19

Applicant: GEN ELECTRIC

Inventor： LIPKIN DON MARK ,  JOHNSON CURTIS ALAN ,  MESCHTER PETER JOEL ,  SUNDARAM SAIRAM ,  WAN JULIN

IPC: C04B41/45 ,  F01D5/28

Abstract: An article includes a silicon-containing region; at least one outer layer overlying a surface of the silicon-containing region; and a constituent layer on the surface of the silicon-containing region and between and contacting the silicon-containing region and the at least one outer layer, the constituent layer being formed by constituents of the silicon-containing region and being susceptible to creep within an operating environment of the article, wherein the silicon-containing region defines a pluarality of channels and a plurality of ridges that interlock within a plurality of channels formed in the silicon-containing region to physically interlock the at least one outer layer with the silicon-containing region through the constituent layer.

公开(公告)号：CA2928352A1

公开(公告)日：2015-05-21

申请号：CA2928352

申请日：2014-08-19

Applicant: GEN ELECTRIC

Inventor： LIPKIN DON MARK ,  JOHNSON CURTIS ALAN ,  MESCHTER PETER JOEL ,  SUNDARAM SAIRAM ,  WAN JULIN

IPC: C04B41/45 ,  F01D5/28

Abstract: An article includes a silicon-containing region; at least one outer layer overlying a surface of the silicon-containing region; and a constituent layer on the surface of the silicon-containing region and between and contacting the silicon-containing region and the at least one outer layer, the constituent layer being formed by constituents of the silicon-containing region and being susceptible to creep within an operating environment of the article, wherein the silicon-containing region defines a pluarality of channels and a plurality of ridges that interlock within a plurality of channels formed in the silicon-containing region to physically interlock the at least one outer layer with the silicon-containing region through the constituent layer.

公开(公告)号：CA2893872A1

公开(公告)日：2014-06-19

申请号：CA2893872

申请日：2013-11-13

Applicant: GEN ELECTRIC

Inventor： MESCHTER PETER JOEL ,  JOHNSON CURTIS ALAN ,  SUNDARAM SAIRAM ,  WAN JULIN ,  LIPKIN DON MARK

IPC: C23C28/04

Abstract: An article includes a silicon-containing region including surface features on a surface thereof. The surface features include depressions, protuberances, or combinations thereof. At least one outer layer overlies the surface of the silicon- containing region. A constituent layer is provided on the surface of the silicon-containing region and between and contacting the silicon-containing region and the at least one outer layer. The constituent layer is formed by constituents of the silicon-containing region and is susceptible to creep within an operating environment of the article. The surface features physically interlock the at least one outer layer with the silicon- containing region through the constituent layer.

公开(公告)号：CA2893872C

公开(公告)日：2018-11-06

申请号：CA2893872

申请日：2013-11-13

Applicant: GEN ELECTRIC

Inventor： MESCHTER PETER JOEL ,  JOHNSON CURTIS ALAN ,  SUNDARAM SAIRAM ,  WAN JULIN ,  LIPKIN DON MARK

IPC: C23C28/04

Abstract: An article includes a silicon-containing region including surface features on a surface thereof. The surface features include depressions, protuberances, or combinations thereof. At least one outer layer overlies the surface of the silicon- containing region. A constituent layer is provided on the surface of the silicon-containing region and between and contacting the silicon-containing region and the at least one outer layer. The constituent layer is formed by constituents of the silicon-containing region and is susceptible to creep within an operating environment of the article. The surface features physically interlock the at least one outer layer with the silicon- containing region through the constituent layer.

公开(公告)号：AT543591T

公开(公告)日：2012-02-15

申请号：AT08169588

申请日：2008-11-21

Applicant: GEN ELECTRIC

Inventor： BEWLAY BERNARD PATRICK ,  GIGLIOTTI JR ,  RAHMANE MOHAMED ,  KELLY THOMAS JOSEPH ,  WEIMER MICHAEL JAMES ,  SUNDARAM SAIRAM

IPC: B22D21/00 ,  C22B34/12 ,  F27B14/00 ,  F27B14/10

Abstract: Refractory crucibles (8) capable of managing thermal stress and suitable for melting highly reactive alloys having a facecoat, a backing, and at least one retaining ring (30) applied about at least a portion of the backing of the crucible, the retaining ring (30) comprising a composition selected from the group consisting of conductive materials, non-conductive materials, and combinations thereof.