公开(公告)号：EP1959472A3

公开(公告)日：2010-06-02

申请号：EP08101503.4

申请日：2008-02-12

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Arthur, Stephen Daley ,  Elasser, Ahmed ,  Wright, Joshua Isaac ,  Subramanian, Kanakasabapthi ,  Keimel, Christopher Fred ,  Gowda, Arun Virupaksha

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  H01H9/52 ,  H01L24/24 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92144 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  Y10T29/49105 ,  H01L2924/00

Abstract: One embodiment of the invention comprises a MEMS structure further comprising: a MEMS device (240) having a first surface with one or more contact structures (244, 245 and 246) thereon connected to functional elements of the MEMS device (240), a dielectric layer (100) overlying the first surface defining openings therein through which the contact structures (244, 245 and 246) are exposed, a patterned metallization layer (254, 255 and 256) comprising conductive material extending from the contact structures (244, 245 and 246) through the openings in the dielectric layer (100) and onto a surface of the dielectric layer and a first heat sink (190) in thermal communication with the metallization layer (254, 255 and 256).

公开(公告)号：EP1959472A2

公开(公告)日：2008-08-20

申请号：EP08101503.4

申请日：2008-02-12

Applicant: General Electric Company

Inventor： Arthur, Stephen Daley ,  Elasser, Ahmed ,  Wright, Joshua Isaac ,  Subramanian, Kanakasabapthi ,  Keimel, Christopher Fred ,  Gowda, Arun Virupaksha

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  H01H9/52 ,  H01L24/24 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92144 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  Y10T29/49105 ,  H01L2924/00

Abstract: One embodiment of the invention comprises a MEMS structure further comprising: a MEMS device (240) having a first surface with one or more contact structures (244, 245 and 246) thereon connected to functional elements of the MEMS device (240), a dielectric layer (100) overlying the first surface defining openings therein through which the contact structures (244, 245 and 246) are exposed, a patterned metallization layer (254, 255 and 256) comprising conductive material extending from the contact structures (244, 245 and 246) through the openings in the dielectric layer (100) and onto a surface of the dielectric layer and a first heat sink (190) in thermal communication with the metallization layer (254, 255 and 256).

Abstract translation: 本发明的一个实施例包括MEMS结构，进一步包括：具有在其上连接到MEMS器件（240）的功能元件的一个或多个接触结构（244,245和246）的第一表面上的MEMS装置（240），介电 层（100）。其中覆盖所述第一表面限定的开口，通过该接触结构（244,245和246）被暴露，图案化的金属化层（254，255和256）包括用导电材料从接触结构（244，245和扩展 246）通过在所述介电层（100）和到所述电介质层的表面和第一热沉（190）（与金属化层254，255和256）热连通的开口。