公开(公告)号：WO2005052566A2

公开(公告)日：2005-06-09

申请号：PCT/US2004/033506

申请日：2004-10-12

Applicant: GENERAL ELECTRIC COMPANY ,  SANDVIK, Peter, Micah ,  TILAK, Vinayak ,  TUCKER, Jesse ,  WEAVER, Stanton, Earl ,  SHADDOCK, David, Mulford ,  MALE, Jonathan, Lloyd ,  LEMMON, John, Patrick ,  WOODMANSEE, Mark, Allen ,  MANIVANNAN, Venkatesan ,  HAITKO, Deborah, Ann

Inventor： SANDVIK, Peter, Micah ,  TILAK, Vinayak ,  TUCKER, Jesse ,  WEAVER, Stanton, Earl ,  SHADDOCK, David, Mulford ,  MALE, Jonathan, Lloyd ,  LEMMON, John, Patrick ,  WOODMANSEE, Mark, Allen ,  MANIVANNAN, Venkatesan ,  HAITKO, Deborah, Ann

IPC: G01N27/414

CPC classification number: G01N27/4141 ,  G01N33/0037 ,  Y02A50/245

Abstract: A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.

Abstract translation: 一种气体传感器装置，包括半导体衬底; 沉积在半导体衬底的表面上的一个或多个催化栅电极; 沉积在半导体衬底的表面上的一个或多个欧姆触点和沉积在该表面的至少一部分上的钝化层; 其中所述半导体衬底包括选自碳化硅，金刚石，III族氮化物，III族氮化物的合金，氧化锌及其任何组合的材料。

公开(公告)号：EP1685394A2

公开(公告)日：2006-08-02

申请号：EP04794773.4

申请日：2004-10-12

Applicant: GENERAL ELECTRIC COMPANY

Inventor： SANDVIK, Peter, Micah ,  TILAK, Vinayak ,  TUCKER, Jesse ,  WEAVER, Stanton, Earl ,  SHADDOCK, David, Mulford ,  MALE, Jonathan, Lloyd ,  LEMMON, John, Patrick ,  WOODMANSEE, Mark, Allen ,  MANIVANNAN, Venkatesan ,  HAITKO, Deborah, Ann

IPC: G01N27/414

CPC classification number: G01N27/4141 ,  G01N33/0037 ,  Y02A50/245

Abstract: A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.