公开(公告)号：SG2013053368A

公开(公告)日：2014-03-28

申请号：SG2013053368

申请日：2013-07-11

Applicant: GLOBALFOUNDRIES INC

Inventor： CARSTEN GRASS ,  MARTIN TRENTZSCH ,  BORIS BAYHA ,  PETER KROTTENTHALER

Abstract: A method comprises depositing a first portion of a first material layer on a semiconductor structure. A first run of a post-treatment process is performed for modifying at least the first portion of the first material layer. After the first run of the post-treatment process, a second portion of the first material layer is deposited. The second portion is formed of substantially the same material as the first portion. After the deposition of the second portion of the first material layer, a second run of the post-treatment process is performed for modifying at least the second portion of the first material layer.